Patents Assigned to UNITED MICROELCTRONICS CORP.
  • RESISTIVE RANDOM-ACCESS MEMORY DEVICE AND FORMING METHOD THEREOF
    Publication number: 20240074335
    Abstract: A RRAM device includes a bottom electrode, a resistive material layer, atop electrode, a hard mask and high work function sidewall parts. The bottom electrode, the resistive material layer, the top electrode and the hard mask are sequentially stacked on a substrate. The high work function sidewall parts cover sidewalls of the top electrode and sidewalls of the hard mask, thereby constituting a RRAM cell. A method of forming the RRAM device is also provided.
    Type: Application
    Filed: November 8, 2023
    Publication date: February 29, 2024
    Applicant: UNITED MICROELCTRONICS CORP.
    Inventors: Wen-Jen Wang, Chun-Hung Cheng, Chuan-Fu Wang