Abstract: A scribe line structure including a semiconductor substrate, a pad and a first patterned metal layer is provided. The semiconductor substrate has a die region, a die sealing region located outside the die region and a dicing region located outside the die sealing region. The pad is disposed in the dicing region. The first patterned metal layer is disposed in the dicing region, right below and connected to the pad, wherein the first patterned metal layer has a plurality of first patterns directly connected to each other.

Abstract: A semiconductor device comprises a substrate, a semiconductor fin, a first isolation structure and a first dummy structure. The semiconductor fin comprises a first sub-fin and a second sub-fin protruding from a surface of the substrate. The first isolation structure is disposed in the semiconductor fin used for electrically isolating the first sub-fin and the second sub-fin. The first dummy structure is disposed on the first isolation structure and laterally extends beyond the first isolation structure along a long axis of the semiconductor fin, so as to partially overlap a portion of the first sub-fin and a portion of the second sub-fin.

Abstract: A static random access memory (SRAM) cell structure at least comprising a substrate, a transistor, an upper electrode and a capacitor dielectric layer. A device isolation structure is set up in the substrate to define an active region. The active region has an opening. The transistor is set up over the active region of the substrate. The source region of the transistor is next to the opening. The upper electrode is set up over the opening such that the opening is completely filled. The capacitor dielectric layer is set up between the upper electrode and the substrate.

Abstract: A silicon oxide gap-filling process is described, wherein a CVD process having an etching effect is performed to fill up a trench with silicon oxide. The reaction gases used in the CVD process include deposition gases and He/H2 mixed gas as a sputtering-etching gas, wherein the percentage of the He/H2 mixed gas in the total reaction gases is raised with the increase of the aspect ratio of the trench.

Abstract: A polishing head with a floating knife-edge mechanism includes a base, a retaining ring secured to the base defining a pocket area beneath the base, and a lower assembly floating within the pocket area via a diaphragm seal. The lower assembly includes a disk-shaped support plate having a plurality of apertures distributed in a center region of the support plate, a clamp ring used to secure the diaphragm seal along a rim region of the support plate, and the floating knife-edge mechanism positioned between the rim region and the center region of the support plate.