Abstract: A system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
Type:
Grant
Filed:
August 25, 2010
Date of Patent:
July 24, 2012
Assignees:
Infineon Technologies AG, United Microelectronics, Co
Inventors:
Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin
Abstract: A reduction in the intersection of vias on the last layer (“VL”) and holes in the last thin metal layer (“MLHOLE”) can be achieved without degrading product yield or robustness or increasing copper dishing. The mutation of some dense redundant VLs to MLHOLEs decreases the number of intersections between VLs and MLHOLEs.
Type:
Grant
Filed:
January 16, 2007
Date of Patent:
January 25, 2011
Assignees:
Infineon Technologies AG, International Business Machines Corporation, United Microelectronics Co.
Inventors:
Robert C. Wong, Ernst H. Demm, Pak Leung, Alexander M. Hirsch
Abstract: An apparatus, system and method to compensate for the proximity effects in the imaging of patterns in a photolithography process. A light exposure of a photoresist layer is effectuated in predetermined patterns through an exposure mask having light-transmissive openings in correspondence to the predetermined patterns. The exposure mask has areas densely populated with the light-transmissive openings and areas sparsely populated with the light-transmissive openings. Light is attenuated through the densely populated light-transmissive openings by a different amount than through the sparsely populated light-transmissive openings.
Type:
Grant
Filed:
February 11, 2003
Date of Patent:
May 30, 2006
Assignees:
Infineon Technologies AG, United Microelectronics Co.
Inventors:
Hang Yip Liu, Sebastian Schmidt, Benjamin Szu-Min Lin
Abstract: In a semiconductor integrated circuit device, thermo-mechanical stresses on the vias can be reduced by introducing a stress relief layer between the vias and a hard dielectric layer that overlies the vias.
Type:
Grant
Filed:
October 30, 2003
Date of Patent:
November 1, 2005
Assignees:
Infineon Technologies AG, United Microelectronics Co.
Inventors:
Hans-Joachim Barth, Erdem Kaltalioglu, Mark D. Hoinkis, Gerald R. Friese, Pak Leung
Abstract: Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
Type:
Grant
Filed:
May 1, 2002
Date of Patent:
October 19, 2004
Assignees:
International Business Machines Corporation, Infineon Technologies, AG, United Microelectronics Co.
Abstract: A method of fabricating a semiconductor device having a dielectric structure on which an interconnect structure is optionally patterned using lithographic and etching techniques, within a single deposition chamber, is provided. The dielectric structure may optionally be covered by diffusion barrier materials prior to a sputter etching process. This sputter etching process is used to remove the native oxide on an underneath metal conductor surface and includes a directional gaseous bombardment with simultaneous deposition of metal neutral. Diffusion barrier materials may also be deposited into the pattern.
Type:
Grant
Filed:
April 9, 2003
Date of Patent:
August 31, 2004
Assignees:
Infineon Technologies North America Corp., International Business Machines Corporation, United Microelectronics Co.
Inventors:
Chih-Chao Yang, Yun Wang, Larry Clevenger, Andrew Simon, Stephen Greco, Kaushik Chanda, Terry Spooner, Andy Cowley, Sunfei Fang
Abstract: A semiconductor device includes a structure composed of a first inter-level-dielectric with an embedded first Cu dual damascene level. A dielectric is coated on a surface of the structure, and a patterned metal layer is coated on he dielectric. A patterned inter-level-dielectric is coated on the patterned metal layer, and a second Cu dual damascene level is embedded in the patterned inter-level-dielectric. The first Cu dual damascene level, second Cu dual damascene level, and patterned metal layer respectively define the bottom, top and middle plates of a stacked MIM capacitor.
Type:
Grant
Filed:
June 1, 2001
Date of Patent:
January 13, 2004
Assignees:
Infineon Technologies AG, United Microelectronics Co.
Abstract: Application of an adhesion promoter to a cap layer and oxidation of the adhesion promoter prior to deposition of an organic interlevel dielectric thereon reduces via resistance problems during thermal cycles of semiconductor wafers embodying multiple levels of metal and organic interlevel dielectrics.
Type:
Application
Filed:
May 1, 2002
Publication date:
November 6, 2003
Applicants:
INTERNATIONAL BUSINESS MACHINES CORPORATION, Infineon Technologies North America Corp., United Microelectronics Co.
Inventors:
Darryl Restaino, Shahab Siddiqui, Erdem Kaltalioglu, Delores Bennett, C. C. Liu, Hsueh-Chung Chen, Tong-Yu Chen, Gwo-Shii Yang, Chiung-Sheng Hsiung