Patents Assigned to UNITED MIICROELECTRONICS CORP.
  • Method for fabricating memory device
    Patent number: 11508783
    Abstract: A method for fabricating memory device is provided. The method includes forming a transistor on a substrate. Further, a contact structure is formed on a source/drain region of the transistor. A conductive layer is formed on the contact structure. Four memory structures are formed on the conductive layer to form a quadrilateral structure.
    Type: Grant
    Filed: April 20, 2021
    Date of Patent: November 22, 2022
    Assignee: UNITED MIICROELECTRONICS CORP.
    Inventors: Chung-Tse Chen, Ko-Chi Chen, Tzu-Yun Chang