Patents Assigned to UNITED MOCIROELECTRONICS CORP.
  • Method of manufacturing semiconductor device with shallow trench isolation (STI) having edge profile
    Patent number: 9653343
    Abstract: A method for fabricating semiconductor device is disclosed. First, a substrate having a first region and a second region is provided, a shallow trench isolation (STI) is formed in the substrate to separate the first region and the second region, and a patterned hard mask is formed on the first region and part of the STI, in which the patterned hard mask exposes includes an opening to expose part of the STI. Next, a gas is driven-in through the exposed STI to alter an edge of the substrate on the first region.
    Type: Grant
    Filed: June 2, 2016
    Date of Patent: May 16, 2017
    Assignee: UNITED MOCIROELECTRONICS CORP.
    Inventors: Kai-Kuen Chang, Shih-Yin Hsiao, Chang-Po Hsiung