Patents Assigned to United Solar Ovinic LLC
  • HIGH QUALITY SEMICONDUCTOR MATERIAL
    Publication number: 20100116338
    Abstract: A hydrogenated, silicon based semiconductor alloy has a defect density of less than 1016 cm?3. The alloy may comprise a hydrogenated silicon alloy or a hydrogenated silicon-germanium alloy. Hydrogen content of the alloy is generally less than 15%, and in some instances less than 11%. The tandem photovoltaic devices which incorporate the alloy exhibit low levels of photo degradation. In some instances, the material is fabricated by a high speed VHF deposition process.
    Type: Application
    Filed: November 7, 2008
    Publication date: May 13, 2010
    Applicant: United Solar Ovinic LLC
    Inventors: Xixiang Xu, Subhendu Guha, Chi Yang