Patents Assigned to United States of America as represented by the Secetary of the Air Force
  • Patent number: 10463733
    Abstract: A method for creating a stable protein/antibody ionic liquid, comprising: (a) cationizing aqueous proteins/antibodies by addition of an excess of a positively-charged crosslinker in the presence of a coupling reagent; (b) purifying the cationized proteins/antibodies; (c) titrating the cationized proteins/antibodies with a corresponding biologically-compatible counter anionic polymer to create at least one protein/antibody cation/anion pair in aqueous solution until the cation/anion pair solution becomes negative by zeta potential measurement; (d) repeatedly dialyzing the protein/antibody cation/anion pair in water to remove excess anionic polymer using at least one molecular weight cutoff 7000 dialysis membrane; (e) lyophilizing the protein/antibody cation/anion pair to remove most of the water, forming a lyophilized solid; and (f) heating the lyophilized solid until a protein/antibody ionic liquid is generated. The antibody may be any desired antibody, and the anion may be any biologically-compatible anion.
    Type: Grant
    Filed: February 23, 2017
    Date of Patent: November 5, 2019
    Assignee: United States of America as represented by the Secetary of the Air Force
    Inventors: Joseph M. Slocik, Rajesh R. Naik, Patrick B. Dennis
  • Patent number: 5259454
    Abstract: Conventional bombs or commercially available explosives are selectively placed about well pipes and exploded to cause closure of the well pipe and thus resulting in substantial reduction in the flow of oil and gas to facilitate extinguishing the fire thereon. Explosive charges are selectively placed about the well pipes in slanting holes so to remove the cellar assembly, make a ramp to the well pipe, and to close the well pipe.
    Type: Grant
    Filed: April 14, 1992
    Date of Patent: November 9, 1993
    Assignee: The United States of America as represented by the Secetary of the Air Force.
    Inventors: Thomas E. Bretz, Jr., Joseph D. Renick, George Y. Baladi, Wesley D. Tucker
  • Patent number: 4887138
    Abstract: A P-I-N photodetector is fabricated having a first upper light transmitting n.sup.- InP layer overlaying a second light absorbing layer of n.sup.- GaInAs in turn overlaying a substrate of n+InP or N+GaAs, together with p+ ion implant zones formed within the first layer which completely penetrate the first layer and partially penetrate the second layer to form a buried junction within the second layer, the junction being exposed to ambient air. The implants are preferably formed by ion implantation of Be, Cd, Zn or Mg.
    Type: Grant
    Filed: March 23, 1988
    Date of Patent: December 12, 1989
    Assignee: The United States of America as represented by the Secetary of the Air Force
    Inventor: Peter D. Gardner