Abstract: A conductive memory stack is provided. The memory stack includes a bottom electrode, a top electrode and a multi-resistive state element that is sandwiched between the electrodes. The bottom electrode can be described as having a top face with a first surface area, the top electrode has a bottom face with a second surface area and the multi-resistive state element has a bottom face with a third surface area and a top face with a fourth surface area. The multi-resistive state element's bottom face is in contact with the bottom electrode's top face and the multi-resistive state element's top face is in contact with the top electrode's bottom face. Furthermore, the fourth surface area is not equal to the second surface area.
Type:
Application
Filed:
November 10, 2003
Publication date:
May 12, 2005
Applicant:
UNITY SEMICONDUCTOR INC.
Inventors:
Darrell Rinerson, Steve Hsia, Steven Longcor, Wayne Kinney, Edmond Ward, Christophe Chevallier
Abstract: A multi-resistive state element that uses a treated interface is provided. A memory plug includes at least two electrodes that sandwich a multi-resistive state element. Using different treatments on both electrode/multi-resistive state element interfaces improves the memory properties of the entire memory device.
Type:
Application
Filed:
September 19, 2003
Publication date:
August 19, 2004
Applicant:
Unity Semiconductor, Inc.
Inventors:
Darrell Rinerson, Wayne Kinney, John Sanchez, Steven W. Longcor, Steve Kuo-Ren Hsia, Edmond R. Ward, Christophe J. Chevallier
Abstract: A programming circuit is provided. As a conductive memory cell is programmed, its resistance changes. The provided programming circuit monitors the changing resistance while programming the memory cell. The programming circuit can be used to only program the memory cell for as long as programming is actually needed. Additionally, the programming circuit can be used to only program the memory cell when it has a value that needs to be changed.
Type:
Application
Filed:
October 6, 2003
Publication date:
August 19, 2004
Applicant:
Unity Semiconductor Inc.
Inventors:
Darrell Rinerson, Christophe J. Chevallier