Abstract: A processing technology is for the fabrication at low temperatures of ferroelectric crystalline oxide thin films, among others PbZrxTi1-xO3 (PZT) (<400° C. for PZT) with ferroelectric properties appropriate for integration in devices. The method is also for the fabrication of ferroelectric thin films of bronze tungsten (A2B2O6), perovskite (ABO3), pyrochlore (A2B2O7) and bismuth-layer (Bi4Ti3O12) structures, in which A and B are mono, bi-, tri-, tetra- and pentavalent ions.
Type:
Application
Filed:
December 11, 2009
Publication date:
January 17, 2013
Applicants:
CONSEJO SUPERIOR DE INVERSITACIONES CIENTIFICAS, UNIVERSIDADE DE AVERIRO
Inventors:
Paula Maria Lousada Silveirinha Vilarinho, Aiying Wu, Maria Lourdes Calzada, Ricardo Jimenez Rioboo, Ignos Bretos