Abstract: A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.

Abstract: The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements.

Abstract: The invention provides a method and kit for the separation and purification of cellular components including polar and non-polar metabolites, genomic DNA, RNA and proteins from a single biological sample where two steps of lysis of the cells are performed sequentially, before and after a metabolite isolation step. The first lysis step is mechanical and performed in order to be incomplete, whereas the second is chemical or both mechanical and chemical. A sequential isolation of genomic DNA, RNA and proteins is carried out after the second lysis step.

Abstract: A solar cell that can increase open-circuit voltage compared to the conventional solar cell, and as a result, can increase conversion efficiency. The solar cell includes a first absorber layer and a second absorber layer, wherein the first absorber layer is a p-type semiconductor layer containing a Ib group element, a IIIb group element, and a VIb group element and including a peak of luminescence whose half width is not less than 1 meV and not more than 15 meV in a photoluminescence spectrum or a cathodoluminescence spectrum; and the second absorber layer contains a Ib group element, a IIIb group element, and a VIb group element, the composition ratio of the Ib group element to the IIIb group element is not less than 0.1 and less than 1.0, and the second absorber layer is provided on the side of the light entering surface of the first absorber layer.

Abstract: A solar cell according to the present invention includes as a light absorption layer a p-type semiconductor layer having a gradient of X/(In+X) ratios in a film thickness direction and containing an Ib group element, In, an element X, and a VIb group element, wherein a ratio C between values of an X/(In+X) ratio A of an uppermost surface of an p-type semiconductor layer and an X/(In+X) ratio B at a depth at which a smallest X/(In+X) ratio in a film is exhibited is represented by Expressions (1) and (2): C=A/B??(1); and 1.1<C<1.8??(2).

Abstract: A method of manufacturing (AgxCu1-x)2ZnSn(SySe1-y)4 thin films, the method comprising: providing a thin film comprising Ag and/or Cu, the thin film further comprising Zn; and annealing the thin film in an atmosphere comprising S and/or Se, and further comprising Sn.

Abstract: The invention relates to an interferometric free-fall gravity gradiometer, comprising at least one source of coherent light L and a first retroreflector TM1 able to fall freely in the gradiometer as well as a second retroreflector TM3 able to fall freely in the gradiometer being disposed under the first retroreflector TM1. Furthermore, a light guiding assembly configured for guiding the coherent light to the first and second retroreflectors TM1, TM3 is provided, thereby generating reflected beams and causing the reflected beams to interfere.

Abstract: The present invention relates to an electrical and/or opto-electrical characterisation method for testing large-area semiconductor devices in production, the method comprising the steps of providing a first electrode and placing it into electrical contact with a contact area of a conducting layer of a semiconductor device; providing a movable electrode assembly, comprising a container holding an electrolyte solution and at least a second electrode; immersing the second electrode into the electrolyte solution; positioning the electrode assembly such that the electrolyte solution places the second electrode into electrical contact with a top surface of the semiconductor device; and scanning the movable electrode assembly relative to the top surface of the semiconductor device while performing electrical measurements.

Abstract: A compound miRNA (miRNA661) (Nr MI0003669 or ENSG00000207574) the sequence of the mature miRNA-661 being 51-ugccugggucucuggccugcgcgu-74 for use as a medicament in the in the treatment and/or the diagnosis of cancer, neuronal disease and infection.

Abstract: The invention relates to any isolated or synthetic compound and, in particular, to compounds having formula which can: modulate the cell specification of neural stem cells, promote the differentiation and subsequent survival of differentiating glial cells and neurones, and promote the differentiation of oligodendrocyte precursor cells into mature oligodendrocytes. In addition, the inventive compounds can reduce the inflammatory component of diseases that affect the nervous system, for example, by reducing activation of the microglia an/or astrocytes and/or by reducing reactive gliosis. The invention also relates to the methods of preparing such compounds and to the use of same in the preparation of a pharmaceutical composition that is intended for the prevention or treatment of diseases that affect the nervous system. More specifically, the inventive compounds have general formula.