Abstract: A micro electronic component, preferably in the form of an electronic memory, includes the use of clusters as an electronic memory. Also disclosed as part of the present invention is a method for fabricating a micro electronic component. The present invention contemplates fabrication of an especially compact electronic memory that works especially with single-electron transistors or single-electronic transfers. According to the present invention, clusters with a metallic cluster nucleus are arranged in parallel grooves essentially in lines or rows and are connected individually to first and second connecting electrodes, such that individually the clusters can be electrically modified or polled independently of each other.

Abstract: A thin-film resistor with a layer structure with a Ti layer and a TiN layer is described, wherein a layer thickness of the Ti layer and a layer thickness of the TiN layer are selected such that a resulting temperature coefficient of resistance (TCR) is smaller than 1000 ppm/° C.

Abstract: A magnetoresistive element, in particular a memory element or a logic element and a method for writing information to such an element are disclosed. The element comprises a first contact of ferromagnetic material and a corresponding layer of magnetoelectric or ferromagnetic material, whereby the first contact is magnetically polarized, depending on an antiferromagnetic boundary surface polarization of the first layer. Said magnetic polarization forms binary information.

Abstract: A method is proposed for opening of hollow structures made of magnetic nanoparticles. To avoid an unwanted heating, the hollow structures are opened by a strong, preferably rotating magnetic field. The method can be used, in particular, for the releasing of a diagnostic and/or therapeutic agent in a human or animal body.