Abstract: A circuit and method for supplying an electronic circuit with a direct supply voltage using high frequency antenna signals. The method includes producing a primary direct voltage equal to a fraction of the supply voltage using at least one antenna signal, producing at least two pumping signals having a frequency lower than the frequency of the antenna signals by means of an oscillator electrically powered by the primary voltage and boosting the primary voltage by means of a charge pump driven by the pumping signals, to obtain the supply voltage.

Abstract: A method and a circuit for scrambling the current signature of a load comprising at least one integrated circuit executing digital processings, including supplying at least the integrated circuit from a supply voltage external to the circuit by combining a current provided by a first linear regulator with a current provided by at least one capacitive switched-mode power supply circuit with one or several switched capacitances.

Abstract: An amplitude demodulation method and device comprising a converter sampling an input signal having its sampling frequency corresponding to three times the modulation carrier frequency.

Abstract: The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.

Abstract: A circuit and method for supplying an electronic circuit with a direct supply voltage using high frequency antenna signals. The method includes producing a primary direct voltage equal to a fraction of the supply voltage using at least one antenna signal, producing at least two pumping signals having a frequency lower than the frequency of the antenna signals by means of an oscillator electrically powered by the primary voltage and boosting the primary voltage by means of a charge pump driven by the pumping signals, to obtain the supply voltage.

Abstract: A non-volatile memory point including a floating gate placed above a semiconductor substrate, the floating gate comprising active portions insulated from the substrate by thin insulating layers, and inactive portions insulated from the substrate by thick insulating layers that do not conduct electrons, the active portions being principally P-type doped, and the inactive portions comprising at least one N-type doped area forming a portion of a PN junction.

Abstract: A method and a circuit for scrambling the current signature of a load including at least one integrated circuit executing digital processings, including the step of, at least on the load ground side, combining a current absorbed by a first linear regulator with a current absorbed by at least one capacitive switched-mode circuit with one or several switched capacitances.

Abstract: A method and a circuit for scrambling the current signature of a load comprising at least one integrated circuit executing digital processings, including supplying at least the integrated circuit from a supply voltage external to the circuit by combining a current provided by a first linear regulator with a current provided by at least one capacitive switched-mode power supply circuit with one or several switched capacitances.

Abstract: The present invention relates to a floating-gate MOS transistor, comprising drain and source regions implanted into a silicon substrate, a channel extending between the drain and source regions, a tunnel oxide, a floating gate, a gate oxide and a control gate extending according to a determined gate length. According to the present invention, the control gate comprises a small gate and a large gate arranged side by side and separated by an electrically insulating material. Application to the production of memory cells without access transistor, and to the implementation of an erase-program method with reduced electrical stress for the tunnel oxide.