Abstract: The process according to the invention makes it possible to deposit a transparent conductive oxide film on a toughened glass substrate placed inside a chamber. It consists in providing sources containing an oxygen-based liquid compound, a liquid compound of the metal intended to form the oxide, and a dopant in gaseous or liquid form, respectively; establishing a temperature between 130 and 300° C. and a pressure between 0.01 and 2 mbar in the chamber; and then bringing said sources into communication with the chamber, which has the effect of vaporizing the liquids at their surface, of drawing them up into the chamber without having to use a carrier gas, and of making them react therein with the dopant so that the oxide layer is formed on the substrate.

Abstract: The device (10) comprises a deposition chamber (12) containing two electrodes (13, 14), one of which comprises a support (16) for a substrate (17) and is earthed, the other being connected to an electric radio frequency generator (15). The device includes a mechanism (23) for extracting gas from the chamber (12) and a mechanism (18) for supplying gas. The device also comprises a mechanism for purification (31) of the gases introduced into the chamber, these a mechanism being arranged so as to reduce the number of oxygen atoms contained in the deposition gas, such gas being made up of silane, hydrogen and/or argon. The procedure consists of creating a vacuum in the deposition chamber (12), purifying the gases using purification a mechanism (31), introducing these purified gases into the chamber (12), then creating a plasma between the electrodes (13, 14). A film of intrinsic microcrystalline silicon in then deposited on the substrate.