Abstract: The invention relates to a method of synthesizing heterocyclic compounds. The invention is characterised in that it consists in opening a compound having formula (I), wherein: —X represents NH, O, S or a N-p group, p being a protective group, such as Boc or Troc; —Y represents N, O, S; —Z represents NH2 or NH-p; and —R1 represents a C1-C6 alkoxy radical, aryloxy, such as phenyloxy, or a pyrrolyl radical, said radicals being optionally substituted, or the salts thereof, and the isomers of the aforementioned compounds. Moreover, the above-mentioned opening step is performed in conditions such as to produce a heterocycle having formula (II), wherein: —X, Y and Z are as defined above; —R2 represents a —CH?CH—CH2—NH—COR1 or —CH?CH—CH2—NH—CO group; and R3 occupies one, two or three positions and represents a halogen. The invention can be used to synthesise natural products.

Abstract: A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.

Abstract: A magnetoresistive memory element including a trapped magnetic region and a free magnetic region separated by a barrier layer. The free magnetic region comprises a stacking of at least two antiferromagnetically-coupled ferromagnetic layers, a layer magnetic moment vector being associated with each layer, the resulting magnetic moment vector, equal to the sum of the layer magnetic moment vectors, having an amplitude smaller than at least 40% of the amplitude of the layer magnetic moment vector of maximum amplitude. The anisotropy field and/or the demagnetizing field tensor is not identical for the at least two ferromagnetic layers, whereby the angular deviations of the layer magnetic moment vectors are different at the time of the application of an external magnetic field, which enables at least two methods for directly writing into the memory element, as well as its initialization.

Abstract: An ion source is described, including a source of neutral particles which arrive at an ionization support positioned inside a chamber which is closed by a cap and which includes lateral walls. The cap includes an outlet orifice opposite which a plate defines a main ionization active surface. An electric field is applied between said device and by an electrode place downstream from the orifice in the direction of ion emission and fitted with a corresponding opening. Overall, the ionization support defines, by virtue of its active surface, and by virtue of holes surrounding said central active surface, a baffle assembly which prevents neutral atoms from passing directly to the outlet orifice, and which contributes to a high degree of ionization.

Abstract: Between the electrostatic sector (SE 23) and the magnetic sector (SM 30) of a mass spectrometer, there is provided a quadrupole (QP 26) which applies parallel beams to the magnetic sector whose inclination depends on the energy dispersion of the particles. A slotted lens (LF 27) corrects the divergence of the quadrupole in the perpendicular plane. A suitable relationship between the angle of the inlet face of the magnetic sector (SM 30) and the deflection angle provided thereby ensures that the second order aperture aberrations of the magnetic sector are corrected. The chromatic aberrations may be corrected by means of a hexapole (HP 25) centered on the focus of the quadrupole (QP 26). Another hexapole (HP 22) placed upstream from the electrostatic sector (SE 23) level with a constriction in vertical section of the particle beam serves to correct second order aperture aberrations related to the electrostatic sector (SE 23).