Abstract: The invention relates to an ionic liquid, comprising the association of a cation, chosen from the following cations of formulas (I) to (III): in which: —R1 to R4 for formulas (I) and (II), and R1 to R3 for formula (III) represent, independently from one another, a hydrogen atom or an aliphatic or cyclic hydrocarbon group, under the condition that at least one of the groups R1 to R4, for formulas (I) and (II) and at least one of the groups R1 to R3 for formula (III) represents an aliphatic hydrocarbon group comprising at least two carbon atoms and at least one of the groups R1 to R4 for formulas (I) and (II) and at least one of the groups R1 to R3 for formula (III) represents a hydrogen atom; and an anion chosen from the following anions of formulas (IV) and (V): in which: —R5 is a cyclic hydrocarbon group; —n1 is an integer equal to 1, 2, 3, 4, 5 or 6; and—n2 is an integer equal to 1, 2, 3 or 4.

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well. The porous silicon ring is produced by forming a doped well in a first surface of a doped substrate, placing that first surface of the substrate into an electrolytic bath, and circulating a current between an opposite second surface of the substrate and the electrolytic bath.

Abstract: The present invention relates to the field of mechanical-ventilation devices, in particular devices that enable drugs to be fed into the airflow, generated by the ventilation device and directed to the respiratory pathways of a patient, using an aerosol dosing device and/or nebulizer. Specifically, the invention relates to an inhalation chamber (1) to be built into a circuit of a mechanical-ventilation respiratory device (100) through which a gas stream is to pass, said inhalation chamber (1) consisting of two portions on either side of the longitudinal axis (A) thereof, and comprising openings that lead into the inner space (Vi) thereof, wherein two openings (10, 11) are to be connected to the circuit of the respirator, i.e.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well. The porous silicon ring is produced by forming a doped well in a first surface of a doped substrate, placing that first surface of the substrate into an electrolytic bath, and circulating a current between an opposite second surface of the substrate and the electrolytic bath.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

Abstract: An acoustic galvanic isolation device includes a substrate capable of transmitting an acoustic wave. A first network of vibrating membrane electroacoustic transducers is arranged on a first surface of the substrate. A second network of vibrating membrane electroacoustic transducers is arranged on a second opposite surface of the substrate. An effective thickness of the substrate exhibits a gradient between the first and second surfaces with respect to propagating the acoustic wave.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

Abstract: A vertical power component includes a silicon substrate of a first conductivity type with a well of the second conductivity type on a lower surface of the substrate. The first well is bordered at a component periphery with an insulating porous silicon ring. An upper surface of the porous silicon ring is only in contact with the substrate of the first conductivity type. The insulating porous silicon ring penetrates into the substrate down to a depth greater than a thickness of the well.

Abstract: A vertical power component including: a silicon substrate of a first conductivity type; on the side of a lower surface of the substrate supporting a single electrode, a lower layer of the second conductivity type; and on the side of an upper surface of the substrate supporting a conduction electrode and a gate electrode, an upper region of the second conductivity type, wherein the component periphery includes, on the lower surface side, a porous silicon insulating ring penetrating into the substrate down to a depth greater than that of the lower layer.

Abstract: A vertical power component including a silicon substrate of a first conductivity type and, on the side of a lower surface supporting a single electrode, a well of the second conductivity type, in which the component periphery includes, on the lower surface side, a peripheral trench at least partially filled with a passivation and, between the well and the trench, a porous silicon insulating ring.

Abstract: A device for administration of an aerosol includes a generator of particles of size between 10 nm and 200 um, a mouthpiece or mouth mask for oral administration of the aerosol during the nasal exhalation phase or during the respiratory pause phase preceding nasal exhalation, and a source of gas or pressure for conveying the particles. The mouthpiece is airtight, extends beyond the teeth of the patient by a maximum length of 4 cm, and administers the aerosol for the nasal cavities, the rhinopharynx or the paranasal sinuses during aerosol administration phases, such that the is successively applied to the mouth, the rhinopharynx and then the nasal fossae and the sinuses, and then the aerosol escapes via one or both of the patient's nostrils. The device does not allow exhalation via the mouth during aerosol administration phases, and the aerosol particles not being directed to the lungs.

Abstract: A high-voltage vertical power component including a silicon substrate of a first conductivity type, and a first semiconductor layer of the second conductivity type extending into the silicon substrate from an upper surface of the silicon substrate, wherein the component periphery includes: a porous silicon ring extending into the silicon substrate from the upper surface to a depth deeper than the first layer; and a doped ring of the second conductivity type, extending from a lower surface of the silicon surface to the porous silicon ring.

Abstract: An electroacoustic transducer including a first electrode formed on a substrate capable of transmitting ultrasounds, a membrane formed above the first electrode and separated therefrom by a cavity, a second electrode formed on the membrane, a first insulating layer on the second electrode, and a third electrode formed on the first insulating layer.

Abstract: An immunogenic fusion protein includes at least, on the C-terminal side, a first peptide composed of the S protein deleted of the transmembrane domain thereof located at the N-terminal end thereof, of a hepatitis B virus (HBV) isolate, and on the N-terminal side, a second peptide composed of the transmembrane domain and of the ectodomain of at least one envelope protein of a hepatitis C virus (HCV) isolate. A hybrid nucleic acid molecule encoding the fusion protein, and a vector including the hybrid nucleic acid molecule, a subviral particle including the fusion protein, an immunogenic composition including at least the fusion protein, or at least the hybrid nucleic acid molecule, or at least the subviral particle, and a cell line for the production of the fusion protein, or of the hybrid nucleic acid molecule, or of the subviral particle are described.

Abstract: The present invention relates to ionic liquids comprising, as cation, a specific phosphonium cation, as anion, a formiate anion, which can be used, alone or as a mixture, to constitute electrolytes for energy storage devices.

Abstract: Newly discovered alternative transcripts of the KLK8 gene encoding kallikrein 8, NT5 and NT6. The sequence of NT5 is set forth in SEQ ID NO:7, and the sequence of NT6 is set forth in SEQ ID NO:8.

Abstract: A surface mount chip including, on the side of a surface, first and second pads of connection to an external device, wherein, in top view, the first pad has an elongated general shape, and the second pad is a point-shaped pad which is not aligned with the first pad.

Abstract: The disclosure relates to an acoustic method and device for localized, contactless, measurement of elastic and dissipative non-linearities and dynamic non-linear viscoelasticity in a medium subjected to a low-frequency acoustic stress and probed by ultrasonic pulses or wave trains.