Patents Assigned to Universite Francois Rabelais, UFR Sciences & Techniques
  • Publication number: 20100159666
    Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.
    Type: Application
    Filed: March 3, 2010
    Publication date: June 24, 2010
    Applicants: STMicroelectronics S.A., Universite Francois Rabelais, UFR Sciences & Techniques
    Inventors: Ludovic Goux, Monique Gervais
  • Publication number: 20070007565
    Abstract: The use of a conductive bidimensional perovskite as an interface between a silicon, metal, or amorphous oxide substrate and an insulating perovskite deposited by epitaxy, as well as an integrated circuit and its manufacturing process comprising a layer of an insulating perovskite deposited by epitaxy to form the dielectric of capacitive elements having at least an electrode formed of a conductive bidimensional perovskite forming an interface between said dielectric and an underlying silicon, metal, or amorphous oxide substrate.
    Type: Application
    Filed: April 20, 2006
    Publication date: January 11, 2007
    Applicants: STMicroelectronics S.A., Universite Francois Rabelais, UFR Sciences & Techniques
    Inventors: Ludovic Goux, Monique Gervais