Abstract: A surface acoustic wave device includes at least one transducer; two acoustic reflectors disposed on either side of the at least one transducer so as to form a cavity, each acoustic reflector comprising an array of electrodes in the form of lines parallel with each other, each array comprising a subset of electrodes connected to a reference potential denoted mass defining a first connection type, and a subset of electrodes that are not connected to any potential, i.e. that have a floating connection defining a second connection type; at least one switching circuit configured to modify the distribution of the connections of at least one part of the electrodes of each array between the different connection types.

Abstract: A field of thermal treatment of ceramic materials is provided, and relates to a method for thermal treatment of a solid ceramic part in a microwave cavity, the direction of the electrical field E being substantially uniform in an empty cavity, comprising the steps that consist of placing, in the cavity, at least one ceramic part surrounded by at least one first susceptor with dimensions, material and arrangement configured to emit infrared radiation, each first susceptor including at least one first main surface, each first main surface being an adjusted surface in which the cone distances are parallel to the electrical field E, and of emitting the microwaves into the cavity.

Abstract: An optical sensor, especially an artificial retina, that includes at least one photosensitive cell. Each cell includes a integration capacitor, a read circuit the operation of which depends on the charge of the integration capacitor, at least one MOS transistor operating subthreshold, and the drain-source current of which influences the charge on the integration capacitor, and at least one photodiode operating in photovoltaic mode and connected to the gate of this transistor, such that the drain-source current of the MOS transistor depends on the optical power received by the photodiode.

Abstract: A microstrip-type microwave sensor for the measurement of the dielectric properties of a solid or liquid material, constituted by a main line and two connected transmission lines integral at one of their extremities to the main line, the main line and two connected transmission lines being spaced from one another by a slot and being made integral with a substrate. The main line is connected to an electrical circuit by each of its two extremities to inject a sinusoidal signal, and wherein said main line has a width giving it an impedance in the range 50 Ohm, the two connected transmission lines being of the same width and of a length equal to one quarter of the wavelength guided in the substrate, the substrate having a height or thickness giving it flexibility or rigidity, the substrate being applied to a metallic support formed of a layer of metallic material.