Patents Assigned to UNIVERSITETSSENTERET PÅ KJELLER (UNIK)
  • POWER SEMICONDUCTOR DEVICE
    Publication number: 20120097974
    Abstract: A method and apparatus for achieving high current gain, and low on-resistance, from a Bipolar Junction Transistor (BJT) in high temperature and high power applications are disclosed. In some embodiments, a thin doped delta layer is inserted at the base emitter junction but inside the base layer. In addition, in some embodiments, a surface recombination layer is inserted between the emitter-base regions of the device. In some embodiments, use of an ion implantation step is avoided to achieve simplicity and low cost of manufacture.
    Type: Application
    Filed: October 20, 2010
    Publication date: April 26, 2012
    Applicant: UNIVERSITETSSENTERET PÅ KJELLER (UNIK)
    Inventor: Muhammad NAWAZ