Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off.
Type:
Grant
Filed:
February 6, 2013
Date of Patent:
May 31, 2016
Assignees:
Seoul Viosys Co., Ltd., University Industry Liaison Office of Chonnam National University
Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off.
Type:
Application
Filed:
February 6, 2013
Publication date:
May 7, 2015
Applicants:
Seoul Viosys Co., Ltd., University Industry Liaison Office of Chonnam National University