Patents Assigned to University Industry Liaison Office of Chonnam National University
  • Patent number: 9356187
    Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off.
    Type: Grant
    Filed: February 6, 2013
    Date of Patent: May 31, 2016
    Assignees: Seoul Viosys Co., Ltd., University Industry Liaison Office of Chonnam National University
    Inventors: Sang Wan Ryu, Jin Ho Kang
  • Publication number: 20150125981
    Abstract: The present invention relates to a method for separating semiconductor devices from a substrate using a nanoporous structure, wherein electrochemical etching is carried out in the absence of a surface metal layer, then the surface metal layer is deposited, and then a GaN thin film is transferred onto a metal wafer by means of wafer bonding and lift-off.
    Type: Application
    Filed: February 6, 2013
    Publication date: May 7, 2015
    Applicants: Seoul Viosys Co., Ltd., University Industry Liaison Office of Chonnam National University
    Inventors: Sang Wan Ryu, Jin Ho Kang