Patents Assigned to University of Agriculture and Technology
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Publication number: 20200255974Abstract: A method of manufacturing a crystalline gallium nitride film, including: a growth step in which a GaCl3 gas, a halogen gas, an NH3 gas, and a carrier gas consisting of one or more inert gases are supplied onto a substrate, thereby growing a crystalline gallium nitride film on the substrate, wherein a partial pressure ratio [PHalogen/PGaCl3] is defined as a ratio of a partial pressure of the halogen gas with respect to a partial pressure of the GaCl3 gas on the substrate in the growth step, and the partial pressure ratio [PHalogen/PGaCl3] is 0.20 or more.Type: ApplicationFiled: September 13, 2018Publication date: August 13, 2020Applicants: National University Corporation Tokyo University of Agriculture and Technology, Taiyo Nippon Sanso CorporationInventors: Akinori Koukitu, Hisashi Murakami, Akira Yamaguchi
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Publication number: 20200239630Abstract: The present invention provides an aliphatic polycarbonate that can be thermally decomposed (dewaxed) at a relatively low temperature. The aliphatic polycarbonate comprises a constituent unit represented by formula (1): wherein R1, R2, and R3 are identical or different, and each represent a hydrogen atom, a substituted or unsubstituted alkyl group having 1 to 15 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; R4 represents a substituted or unsubstituted alkyl group having 1 to 20 carbon atoms, or a substituted or unsubstituted aryl group having 6 to 20 carbon atoms; and n is an integer of 0 to 3.Type: ApplicationFiled: September 3, 2018Publication date: July 30, 2020Applicants: National University Corporation Tokyo University of Agriculture and Technology, Sumitomo Seika Chemicals Co., Ltd.Inventors: Koji NAKANO, Kiyoshi NISHIOKA
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Publication number: 20200243332Abstract: A semiconductor substrate that is used as an underlying substrate for epitaxial crystal growth carried out by the HVPE method includes a ?-Ga2O3-based single crystal, and a principal plane that is a plane parallel to a [100] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer including a ?-Ga2O3-based single crystal and formed on the principal plane of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for producing an epitaxial wafer includes by using the HVPE method, epitaxially growing an epitaxial layer including a ?-Ga2O3-based single crystal on a semiconductor substrate that includes a ?-Ga2O3-based single crystal and has a principal plane parallel to a [100] axis of the ?-Ga2O3-based single crystal.Type: ApplicationFiled: November 16, 2016Publication date: July 30, 2020Applicants: TAMURA CORPORATION, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Ken GOTO, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Publication number: 20200225044Abstract: A map information provision system includes: a road map information database configured to store road map information; a vehicle position determination unit configured to detect and determine a position of a vehicle on a road; a road map information extraction unit configured to extract the road map information around the vehicle from the road map information database, based on the position of the vehicle; and a waypoint map constructor unit configured to determine positions of waypoints and configure a waypoint map that is made up of the plurality of the waypoints, wherein the waypoint map is supplied to a driving support device for the vehicle or a driving control device for the vehicle and is utilized as map information on the planned driving route.Type: ApplicationFiled: October 5, 2018Publication date: July 16, 2020Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, The University of Tokyo, National University Corporation Tokyo University of Agriculture and Technology, School Judicial Person IKUTOKU GAKUENInventors: Kyoichi TOHRIYAMA, Takuma ITO, Satoshi NAKAMURA, Minoru KAMATA, Pongsathorn RAKSINCHAROENSAK, Tsukasa SHIMIZU, Hideo INOUE
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Patent number: 10686255Abstract: A sheet-type metamaterial of a film configuration to exhibit a figure of merit (FOM) exceeding 300 in a terahertz wave band. A film-shaped dielectric substrate has a front surface on which a first wire array is formed, and a back surface on which a second wire array is formed. The first wire array includes elongated metallic first cut wires of a predetermined length l aligned in a y-axis direction with a gap g therebetween and in an x-axis direction with space s therebetween. The second wire array includes second metallic cut wires having the same shape as the first cut wires and aligned to overlap the first cut wires. With a thickness d of the dielectric substrate set at about 50 ?m, the length l of the first cut wire and the second cut wire is a length approximate to a value to generate resonance at a design frequency.Type: GrantFiled: July 15, 2016Date of Patent: June 16, 2020Assignee: National University Corporation Tokyo University of Agriculture and TechnologyInventor: Takehito Suzuki
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Patent number: 10679077Abstract: A road marking recognition device recognizes a road marking from an image acquired by imaging a road surface of a road on which a vehicle is traveling. The road marking recognition device includes: a storage unit configured to store a plurality of templates each of which corresponds to a corresponding one of plurality of feature portions of a road marking as a recognition target and between which a relative positional relationship is known; and a recognition unit configured to detect a second feature portion corresponding to a second template among the plurality of templates when the first feature portion is detected from the image.Type: GrantFiled: October 16, 2017Date of Patent: June 9, 2020Assignees: TOYOTA JIDOSHA KABUSHIKI KAISHA, THE UNIVERSITY OF TOKYO, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Toshiki Kinoshita, Takuma Ito, Satoshi Nakamura, Minoru Kamata, Pongsathorn Raksincharoensak, Tsukasa Shimizu
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Patent number: 10676841Abstract: A semiconductor substrate for being used as a base substrate for epitaxial crystal growth by HVPE method includes a ?-Ga2O3-based single crystal, and a principal surface that is a plane parallel to a [010] axis of the ?-Ga2O3-based single crystal. An epitaxial wafer includes the semiconductor substrate, and an epitaxial layer that includes a ?-Ga2O3-based single crystal and is formed on the principal surface of the semiconductor substrate by epitaxial crystal growth using the HVPE method. A method for manufacturing the epitaxial wafer includes forming the epitaxial layer by epitaxial crystal growth using the HVPE method on the semiconductor substrate.Type: GrantFiled: May 11, 2015Date of Patent: June 9, 2020Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Patent number: 10640643Abstract: The present invention provides a thermally decomposable binder for which dewaxing can be performed at low temperatures, and an inorganic fine particle-dispersed paste composition comprising this binder. Specifically, the present invention provides a thermally decomposable binder comprising an aliphatic polycarbonate resin comprising a constituent unit represented by formula (1): wherein R1, R2, and R3 are identical or different, and each represents a hydrogen atom, an alkyl group having 1 to 10 carbon atoms, or an aryl group having 6 to 20 carbon atoms, and n is 1 or 2, and provides an inorganic fine particle-dispersed paste composition comprising this binder.Type: GrantFiled: March 23, 2017Date of Patent: May 5, 2020Assignees: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.Inventors: Koji Nakano, Kiyoshi Nishioka
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Publication number: 20200102667Abstract: [Problem] To provide a crystal laminate structure having a ?-Ga2O3 based single crystal film in which a dopant is included throughout the crystal and the concentration of the dopant can be set across a broad range. [Solution] In one embodiment of the present invention, provided is a crystal laminate structure 1 which includes: a Ga2O3 based substrate 10; and a ?-Ga2O3 based single crystal film 12 formed by epitaxial crystal growth on a primary face 11 of the Ga2O3 based substrate 10 and including Cl and a dopant doped in parallel with the crystal growth at a concentration of 1×1013 to 5.0×1020 atoms/cm3.Type: ApplicationFiled: December 3, 2019Publication date: April 2, 2020Applicants: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken GOTO, Akinori KOUKITU, Yoshinao KUMAGAI, Hisashi MURAKAMI
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Publication number: 20200103185Abstract: Provided is a heat transfer device comprising: a housing; a regenerator; a first heat exchanger; and a second heat exchanger.Type: ApplicationFiled: May 9, 2018Publication date: April 2, 2020Applicants: National University Corporation Tokyo University of Agriculture and Technology, Shoden Kogyo Co., Ltd.Inventors: Yuki Ueda, Kazuyuki Yoshioka
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Publication number: 20200071848Abstract: This disclosure provides a vapor-liquid reaction device including a vapor-liquid reaction chamber and a projecting member. The vapor-liquid reaction chamber holds a molten metal in a lower portion of an internal space of the vapor-liquid reaction chamber.Type: ApplicationFiled: May 17, 2018Publication date: March 5, 2020Applicants: National University Corporation Tokyo University of Agriculture and Technology, Taiyo Nippon Sanso Corporation, Taiyo Nippon Sanso CSE CorporationInventors: Akinori Koukitu, Hisashi Murakami, Akira Yamaguchi, Kazushige Shiina, Hayato Shimamura
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Patent number: 10538732Abstract: A cell isolation method includes: a cell trapping step of allowing a test liquid to pass through a cell trapping filter which has a plurality of through-holes in the thickness direction, thereby trapping isolation target cells contained in the test liquid on one surface of the cell trapping filter; a gel embedding step of introducing a stimulus-responsive hydrogel onto the one surface of the cell trapping filter on which the cells have been trapped in the cell trapping step, thereby embedding the cells in the stimulus-responsive hydrogel; a gel hardening step of applying a stimulus to the stimulus-responsive hydrogel in which the cells are embedded, thereby hardening the stimulus-responsive hydrogel; and a detachment step of detaching the stimulus-responsive hydrogel that was hardened in the gel hardening step from the cell trapping filter.Type: GrantFiled: October 29, 2015Date of Patent: January 21, 2020Assignee: National University Corporation Tokyo University of Agriculture and TechnologyInventors: Tomoko Yoshino, Tsuyoshi Tanaka, Tadashi Matsunaga, Ryo Negishi, Hisashige Kanbara, Seita Nakamura
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Patent number: 10538862Abstract: A crystal laminate structure includes a Ga2O3-based substrate, and a ?-Ga2O3-based single crystal film formed by epitaxial crystal growth on a principal surface of the Ga2O3-based substrate. The ?-Ga2O3-based single crystal film includes Cl and a dopant doped in parallel with the crystal growth at a concentration of not less than 1×1013 atoms/cm3 and not more than 5.0×1020 atoms/cm3.Type: GrantFiled: February 17, 2016Date of Patent: January 21, 2020Assignees: TAMURA CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Ken Goto, Akinori Koukitu, Yoshinao Kumagai, Hisashi Murakami
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Publication number: 20200017111Abstract: A driving assistance system includes a driving readiness degree estimation unit configured to estimate a driving readiness degree relating to a driving consciousness of the driver based on the travel state of the vehicle or the driving operation of the vehicle by the driver and the traveling environment of the vehicle, a proportional gain calculation unit configured to calculate a proportional gain based on the driving readiness degree and the speed of the vehicle, and an assistance torque calculation unit configured to calculate the assistance torque according to a value obtained by multiplying a difference between the target steering angle and the actual steering angle by the proportional gain. If the speed is constant, the proportional gain calculation unit is configured to calculate the proportional gain as a smaller value as the driving readiness degree becomes lower.Type: ApplicationFiled: June 17, 2019Publication date: January 16, 2020Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Shintaro Inoue, Pongsathorn Raksincharoensak
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Publication number: 20190256651Abstract: The present invention provides a thermally decomposable binder that achieves a reduced residual carbon after sintering, and that can be subjected to a dewaxing treatment at a relatively low temperature in a non-oxidative atmosphere. More specifically, the present invention provides an aliphatic polycarbonate that has a structure obtained by neutralizing a Brønsted acid with an organic onium salt in a side chain.Type: ApplicationFiled: July 5, 2017Publication date: August 22, 2019Applicants: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, SUMITOMO SEIKA CHEMICALS CO., LTD.Inventors: Koji NAKANO, Kiyoshi NISHIOKA, Shizuka HACHIKEN
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Publication number: 20190233130Abstract: The present disclosure is a heat radiator for an aircraft which cools a heat source installed in the aircraft, which includes a heat radiating part in which a contact surface comes into contact with a main flow, the contact surface being formed with a concave portion or a convex portion in which a surface thereof directed upstream in a flow direction of the main flow is curved in a plan view.Type: ApplicationFiled: April 9, 2019Publication date: August 1, 2019Applicants: IHI Corporation, National University Corporation Tokyo University of Agriculture and TechnologyInventors: Yoji OKITA, Akira MURATA
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Patent number: 10330670Abstract: Provided are a therapeutic or prophylactic agent for retinopathy of prematurity (ROP) that is suited to the pathogenic mechanism of ROP and a method of testing for ROP. The therapeutic or prophylactic agent for ROP uses at least one substance from the group consisting of inhibitors against tryptase derived from mast cells and/or mast cell stabilizers as an active ingredient. The testing method for ROP includes detecting a marker substance that can be released by degranulation of mast cells in a biological sample originating from a patient and determining the presence or absence of ROP on the basis of the detected amount of the marker.Type: GrantFiled: October 24, 2013Date of Patent: June 25, 2019Assignees: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY, JAPAN INNOVATION THERAPEUTICS, INC.Inventors: Hiroshi Matsuda, Akane Tanaka
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Patent number: 10292315Abstract: A cooling device includes a heat sink that includes a plurality of first heat radiating fins and a plurality of second heat radiating fins, and a compressor as a blower that causes cooling air to flow from an inlet toward an outlet of a cooling passage of the heat sink. The cooling device includes in a flow direction of the cooling air that passes via the heat sink a mist supplier arranged upstream of the heat sink and that supplies mist M to the cooling passage of the heat sink.Type: GrantFiled: November 15, 2017Date of Patent: May 14, 2019Assignees: IHI CORPORATION, NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Yoji Okita, Akira Murata
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Patent number: 10264796Abstract: A method for producing a seed of a plant resistant to seedling diseases is provided which includes contacting a non-pathogenic microbe corresponding to a seed-borne pathogen with a flower part of a host plant around the flowering time and collecting a seed of the host plant colonized by the non-pathogenic microbe obtained thereafter, and a method for controlling seedling diseases using the seed.Type: GrantFiled: March 7, 2014Date of Patent: April 23, 2019Assignee: NATIONAL UNIVERSITY CORPORATION TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGYInventors: Tsutomu Arie, Tohru Teraoka, Youko Nonaka, Akihiro Kato, Jun Tanaka, Tomomi Tokunaga, Kenichi Kurauchi, Tomotaka Suzuki
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Publication number: 20190106103Abstract: A driving assistance control device includes an active pedal configured to control a driving and braking force of a vehicle, an electronic control unit configured to detect a potential risk area in which an obstacle entering a scheduled traveling route of the vehicle is likely to be present, and determine a reference speed at which contact between the vehicle and the obstacle can be avoided even when the obstacle enters the scheduled traveling route of the vehicle from the detected potential risk area based on a positional relationship between the vehicle and the potential risk area, and a force feedback unit configured to apply an assistance reaction force in a direction in which the amount of manipulation is reduced, to the active pedal when a current speed of the vehicle exceeds the reference speed.Type: ApplicationFiled: September 25, 2018Publication date: April 11, 2019Applicants: TOYOTA JIDOSHA KABUSHIKI KAISHA, National University Corporation Tokyo University of Agriculture and Technology, THE UNIVERSITY OF TOKYO, SCHOOL JUDICIAL PERSON IKUTOKU GAKUENInventors: Shintaro INOUE, Pongsathorn RAKSINCHAROENSAK, Yuichi SAITO, Takuma ITO, Tsukasa SHIMIZU, Hideo INOUE