Patents Assigned to University of Electronic Science and Technology of China
  • Publication number: 20230036698
    Abstract: A reverse blocking gallium nitride (GaN) high electron mobility transistor includes, sequentially stacked from bottom to top, a substrate, a nucleation layer, a buffer layer, a barrier layer, a dielectric layer. The buffer layer and the barrier layer form a heterojunction structure. The barrier layer is provided with at least two p-GaN structures. The barrier layer is provided with a source metal at one end and a drain metal at the other end, source metal forms ohmic contact and drain metal forms Schottky contact with AlGaN barrier, respectively. In forward conduction, the two-dimensional electron gas below the spaced p-GaN structure connected to the drain metal is conductive, and a turn-on voltage of the device is low. During reverse blocking, the two-dimensional electron gas at the spaced p-GaN structure is rapidly depleted under reverse bias, to form a depletion region, so that the blocking capability of the device is improved.
    Type: Application
    Filed: July 29, 2022
    Publication date: February 2, 2023
    Applicants: University of Electronic Science and Technology of China, Institute of Electronic and Information Engineering of UESTC in Guangdong
    Inventors: Ruize SUN, Wanjun CHEN, Chao LIU, Pan LUO, Fangzhou WANG
  • Patent number: 11565830
    Abstract: A method for calculating an optimal wheel position control angle of passenger boarding bridge automatic docking system includes collecting ranging information of a sensor to rotate the bridgehead direction via a distance measuring sensor on both sides of the bridgehead of the passenger boarding bridge, making the bridgehead parallel to the aircraft fuselage; collecting information of an aircraft door by a camera at the bridge head of the passenger boarding bridge to obtain a center position D of the aircraft door; in an ideal docking situation, the aircraft door should appear at the bridge head position as D?; the position where D? is projected vertically onto the aircraft fuselage is D?, that is, the line segment DD? is the horizontal distance deviation between the current passenger boarding bridge and the aircraft door, the line segment D?D? is the distance between the current boarding bridge and the aircraft fuselage.
    Type: Grant
    Filed: February 7, 2021
    Date of Patent: January 31, 2023
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Run Ye, Bin Yan, Cheng Zhang, Xuemei He, Xiaojia Zhou
  • Patent number: 11562224
    Abstract: A 1D-CNN-based ((one-dimensional convolutional neural network)-based) distributed optical fiber sensing signal feature learning and classification method is provided, which solves a problem that an existing distributed optical fiber sensing system has poor adaptive ability to a complex and changing environment and consumes time and effort due to adoption of manually extracted distinguishable event features.
    Type: Grant
    Filed: August 8, 2018
    Date of Patent: January 24, 2023
    Assignee: University of Electronic Science and Technology of China
    Inventors: Huijuan Wu, Jiping Chen, Xiangrong Liu, Yao Xiao, Mengjiao Wang, Bo Tang, Mingru Yang, Haoyu Qiu, Yunjiang Rao
  • Publication number: 20220412919
    Abstract: The present invention provides a method for eddy current thermography defect reconstruction based on electrical impedance tomography, first, obtaining a thermal reference image of temperature change with time by acquiring a thermogram sequence S of the specimen in the process of heating and fitting a curve for pixels of each location of the thermogram sequence S, then, creating a current matrix and a magnetic potential matrix, and calculating the satisfied conductivity distribution through iterations, so as a reconstructed image is obtained, then taking the low conductivity area of the reconstructed image as the defect profile, thus the defect profile is identified and quantified.
    Type: Application
    Filed: August 29, 2022
    Publication date: December 29, 2022
    Applicant: University of Electronic Science and Technology of China
    Inventors: Libing BAI, Xu ZHANG, Chao REN, Yiping LIANG, Ruiheng ZHANG, Yong DUAN, Jinliang SHAO, Yali ZHENG, Yuhua CHENG
  • Patent number: 11519731
    Abstract: A pedestrian adaptive zero-velocity update point selection method based on a neural network, including the following steps: S1, collecting inertial navigation data of different pedestrians in different motion modes; S2, preprocessing the inertial navigation data collected in the step S1, labeling the preprocessed data, and obtaining a training data set, a validation data set, and a test data set according to the preprocessed data and a label corresponding to the preprocessed data; S3, inputting the training data set to a convolutional neural network for training, obtaining a pedestrian adaptive zero-velocity update point selection model based on the convolutional neural network, and using the validation data set to validate the pedestrian adaptive zero-velocity update point selection model; and S4, inputting the test data set into the pedestrian adaptive zero-velocity update point selection model based on the convolutional neural network, and obtaining a selection result of pedestrian zero-velocity update poi
    Type: Grant
    Filed: March 12, 2020
    Date of Patent: December 6, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Zhuoling Xiao, Xinguo Yu, Yi He, Bo Yan
  • Publication number: 20220385323
    Abstract: A wireless single-phase AC-to-AC conversion circuit based on a 2.4G microwave includes a receiving antenna unit, a RF switch unit, a positive voltage rectification unit, a negative voltage rectification unit and an AC synthesis unit. An output port of the receiving antenna unit is connected to the common input port of the RF switch unit. A first microwave output end of the RF switch unit and a second microwave output end of the RF switch unit are correspondingly connected to a microwave input end of the positive voltage rectification unit and a microwave input end of the negative voltage rectification unit, respectively. ADC output end of the positive voltage rectification unit and a DC output end of the negative voltage rectification unit are correspondingly connected to a positive voltage input port of the AC synthesis unit and a negative voltage input port of the AC synthesis unit, respectively.
    Type: Application
    Filed: December 21, 2021
    Publication date: December 1, 2022
    Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Xiaoning LI, Wei ZHOU, Zidong ZHANG, Xin FANG, Shijun SHEN, Dawei GONG, Dejie LI
  • Publication number: 20220373577
    Abstract: The present invention provides a system for data mapping and storing in digital three-dimensional oscilloscope, wherein the fixed coefficients, which are calculated according the parameters and settings of a digital oscilloscope, are stored into a fixed coefficient memory CO RAM, the fixed coefficients are outputted to N fractional operation units through N?1 D flip-flop delay units to multiply with the acquired data x(n) and then be accumulated, thus N fractional calculus results are obtained. In this way, N fractional calculus results can be obtained by performing L/N fractional calculus operations. N fractional calculus results are sent to a signal processing and display module, in which they are converted into a display data through a drawing thread, and the display data are sent to LCD for displaying, thus the fractional calculus operation and display of a input signal in a digital oscilloscope is realized.
    Type: Application
    Filed: November 1, 2021
    Publication date: November 24, 2022
    Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Bo XU, Kai CHEN, Libing BAI, Lulu TIAN, Hang GENG, Yuhua CHENG, Songting ZOU, Jia ZHAO, Yanjun YAN, Xiaoyu HUANG
  • Publication number: 20220367712
    Abstract: A power semiconductor device includes a P-type substrate, an N-type well region, a P-type body region, a gate oxide layer, a polysilicon gate, a first oxide layer, a first N+ contact region, a first P+ contact region, drain metal, a first-type doped region, and a gate oxide layer. An end of the P-type body region is flush with or exceeds an end of the polysilicon gate, wherein Cgd of the power semiconductor device is reduced and a switching frequency of the power semiconductor device is increased. A polysilicon field plate connected with a source is introduced over a drift region that is not only shield an influence of the polysilicon gate on the drift region, thereby eliminating Cgd caused by overlapping of traditional polysilicon gate and drift region, but also enable the power semiconductor device to have strong robustness against an hot carrier effect.
    Type: Application
    Filed: July 5, 2021
    Publication date: November 17, 2022
    Applicant: University of Electronic Science and Technology of China
    Inventors: Ming QIAO, Liu YUAN, Zhao WANG, Wenliang LIU, Bo ZHANG
  • Publication number: 20220352304
    Abstract: A lateral power semiconductor device includes a first type doping substrate at a bottom of the lateral power semiconductor device, a second type doping drift region, a second type heavy doping drain, a first type doping body; a first type heavy doping body contact and a second type heavy doping source, where dielectric layers are on a right side of the second type heavy doping source; the dielectric layers are arranged at intervals in a longitudinal direction in the first type doping body, and between adjacent dielectric layers in the longitudinal direction is the first type doping body; and a polysilicon is surrounded by the dielectric layer at least on a right side. Compared with conventional trench devices, the lateral power semiconductor device introduces a lateral channel, to increase a current density, thereby realizing a smaller channel on-resistance.
    Type: Application
    Filed: June 18, 2021
    Publication date: November 3, 2022
    Applicant: University of Electronic Science and Technology of China
    Inventors: Ming QIAO, Shuhao ZHANG, Zhangyi'an YUAN, Dican HOU, Bo ZHANG
  • Patent number: 11486901
    Abstract: A system maps and stores data in digital three-dimensional oscilloscope, wherein an ADC module has four ADC submodules. Four acquired waveform data are sent to an extraction module, and buffered in a FIFO module. When a trigger signal arrives, FIFO module outputs four extracted waveform data to a mapping address calculation module for calculating a mapping address and a RAM serial number for each point data, and the waveform data comparison and control module performs the reading and writing control of the 4√óN dual port RAMs. When mapping number reaches a frame number, the RAM array module outputs its waveform probability values to the upper computer module to convert each value into RBG values, and the display module displays the waveforms of input signals of four channels on a screen according the RBG values.
    Type: Grant
    Filed: April 1, 2021
    Date of Patent: November 1, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Yuhua Cheng, Bo Xu, Kai Chen, Songting Zou, Libing Bai, Hang Geng, Yanjun Yan, Jia Zhao
  • Patent number: 11489583
    Abstract: A two-way wireless relay transmission method suitable for multiple relay nodes proposes a transmission solution based on a Decode-and-Forward (DF) technology and Network Coding (Network Coding, NC) technology suitable for a two-way wireless relay network. The method has an advantage of achieving a maximum spectrum efficiency based on the DF technology, and proposes a retransmission-free error control solution to avoid a problem of error spreading brought about by the NC technology to obtain an effective transmission throughput that is superior to existing solutions.
    Type: Grant
    Filed: December 18, 2020
    Date of Patent: November 1, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Xuesong Tan, Xingyu Zhang
  • Patent number: 11482628
    Abstract: A double Schottky-barrier diode includes a semi-insulating substrate, a left mesa formed by growth and etching on the semi-insulating substrate, a middle mesa formed by growth and etching on the semi-insulating substrate, a right mesa formed by growth and etching on the semi-insulating substrate, two anode probes and two air-bridge fingers. The two Schottky contacts are closely fabricated on the same mesa (middle mesa) in a back-to-back manner to obtain even symmetric C-V characteristics and odd symmetric I-V characteristics from the device level. The output of a frequency multiplier fabricated using the double Schottky-barrier diode only has odd harmonics, but no even harmonics, which is suitable for the production of high-order frequency multipliers. The cathodes of the two Schottky contacts are connected by the buffer layer without ohmic contact.
    Type: Grant
    Filed: October 23, 2020
    Date of Patent: October 25, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Yong Zhang, Chengkai Wu, Han Wang, Haomiao Wei, Ruimin Xu, Bo Yan
  • Patent number: 11483704
    Abstract: A method for physical layer secure transmission against an arbitrary number of eavesdropping antennas includes: S1: communication between legitimate transmitter Alice and legitimate receiver Bob is confirmed; S2: Alice randomly generates a key bit bk with MS bits, maps the key bit bk into a key symbol K, and performs an XOR on the key bit bk and to-be-transmitted confidential information b to obtain an encrypted bits bs; S3: Bob transmits a pilot sequence to Alice, and Alice calculates a candidate precoding space W and transmits modulated symbol streams s=(s1, . . , sN) by using precoding W(e); S4: Bob measures received signal strength of each antenna, estimates the corresponding antenna vector e, inversely maps the vector e to obtain key symbols and key bits, and demodulates the received symbol streams in sequence at each activated antenna to obtain demodulated ciphertext bits; S5: Bob performs an XOR on observed key bits and the demodulated ciphertext bits to obtain the confidential information.
    Type: Grant
    Filed: December 27, 2020
    Date of Patent: October 25, 2022
    Assignees: University of Electronic Science and Technology of China, Science & Technology Department of Sichuan Province
    Inventors: Jie Tang, Liang Chen, Hong Wen, Xinchen Xu, Huanhuan Song, Kaiyu Qin
  • Patent number: 11473401
    Abstract: The present invention discloses a method for controlling a toe-end sliding sleeve in a horizontal well based on efficient decoding communication. The method comprises the following steps: forming a pressure wave signal by adjusting and controlling a pressure value in a wellbore according to a first preset encoding manner; acquiring a pressure value change signal in the wellbore, determining a reference time by using an STA/LTA method, and predicting pressure value to acquire a predicted pressure value signal curve; identifying a toe-end sliding sleeve control command in the acquired pressure wave signal by using a first preset decoding manner based on the fitness between the acquired pressure value signal curve and the predicted pressure value signal curve; and driving the toe-end sliding sleeve to perform actions according to the toe-end sliding sleeve control command.
    Type: Grant
    Filed: February 5, 2021
    Date of Patent: October 18, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Hua Wang, Xingming Wang, Yukun Fu
  • Patent number: 11466979
    Abstract: The present invention discloses a method of measuring longitude deformation of blades. The radiation and rotation speed of the blade are collected by an optical probe and a synchronized rotation sensor. The stretch of the blade is able to be determined by the obvious change in the light intensity detected by the optical probe. The precision servo motor keeps driving the optical probe to move upward. The collected radiation is compared with the radiation collected on the previous point. The stretch of the blade is calculated based on position of the blade tip which is determined by the time when the high level radiation from the blade is disappeared. The longitude deformation of the blade is calculated by plugging the stretch into the deformation equation. Mapping the calculated deformation with the number of the blade calculated with rotation speed synchronizing signals to achieve the deformation of all the blades.
    Type: Grant
    Filed: January 19, 2021
    Date of Patent: October 11, 2022
    Assignee: University of Electronic Science and Technology of China
    Inventors: Chao Wang, Zezhan Zhang, Peifeng Yu, Yi Niu, Ying Duan, Xueke Gou, Yekui Zhong, Anmei Qiu, Pei Huang, Yuehai Zhang, Shan Gao, Jing Jiang
  • Publication number: 20220318946
    Abstract: A method for image shape transformation based on a generative adversarial network includes the following steps: generating a segmentation mask of an image to be transformed; constructing a generator and a discriminator, and constructing the generative adversarial network through the generator and the discriminator; constructing a loss function, and training the generative adversarial network by a gradient descent method according to the loss function; and inputting the segmentation mask of the image to be transformed into the trained generative adversarial network to obtain an image shape transformation result.
    Type: Application
    Filed: October 13, 2021
    Publication date: October 6, 2022
    Applicant: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Zhen QIN, Yi DING, Tianming ZHUANG, Fuhu DENG, Zhiguang QIN
  • Patent number: 11442295
    Abstract: A high-electron mobility transistor (HEMT) array terahertz wave modulator loaded in a waveguide is provided, which belongs to the technical field of electromagnetic functional devices and focuses on fast dynamic functional devices in the terahertz band. The device comprises a waveguide cavity and a modulation chip. The modulation chip comprises a semiconductor material substrate, a heterostructure material epitaxial layer, an artificial microstructure, and a socket circuit. The applied voltage controls the distribution change of the two-dimensional electron gas in the HEMT, which in turn controls the resonance mode conversion in the artificial microstructure, thereby control the transmission of electromagnetic waves in the waveguide. The modulator has a modulation depth of up to 96% and a modulation rate above 2 GHz.
    Type: Grant
    Filed: April 27, 2020
    Date of Patent: September 13, 2022
    Assignee: University of Electronic Science and Technology of China
    Inventors: Yaxin Zhang, Shixiong Liang, Xilin Zhang, Ziqiang Yang Yang, Zhihong Feng
  • Patent number: 11434147
    Abstract: A preparation method of a vanadium oxide powder with high phase-transition latent heat includes steps of taking vanadium pentoxide, oxalic acid and PVP as raw materials, preparing a B-phase VO2 nano-powder modified by the PVP, and then annealing the B-phase VO2 nano-powder modified by the PVP at high temperature in an oxygen atmosphere, and obtaining the vanadium oxide powder with high phase-transition latent heat which includes M-phase VO2 with a mass percentage in a range of 96-99% and V6O13 with a mass percentage in a range of 1-4%, and has the phase-transition latent heat larger than 50 J/g. Compared with the vanadium oxide powder prepared by a traditional method without PVP modification and using a vacuum annealing process, the phase-transition latent heat of the vanadium oxide powder provided by the present invention is increased by at least 60%.
    Type: Grant
    Filed: May 10, 2020
    Date of Patent: September 6, 2022
    Assignee: University of Electronic Science and Technology of China
    Inventors: Deen Gu, Yatao Li, Yadong Jiang
  • Patent number: 11424331
    Abstract: A power semiconductor device for improving a hot carrier injection is provided. A drain field plate is introduced at one side of a drain in a dielectric trench and connected to a drain electrode, having identical electric potential, thereby improving hole injection effects at a drain side of the dielectric trench. A shield gate field plate is introduced at one side of a source electrode in the dielectric trench and is connected to the source electrode or ground, thereby forming a shield gate. While decreasing gate drain parasitic capacitance Cgd, electron injection effects at a source electrode side of the dielectric trench are improved. With a trench etching method, the improvement of hot carrier injection can also be achieved by making carriers avoid a side wall of the dielectric trench on a path.
    Type: Grant
    Filed: June 16, 2021
    Date of Patent: August 23, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Ming Qiao, Dingxiang Ma, Zhengkang Wang, Bo Zhang
  • Patent number: 11418795
    Abstract: A temporal domain rate distortion optimization based on video content characteristic and QP-? correction provides the temporal domain rate distortion optimization based on the video content characteristic and the QP-? correction for a new generation encoder AV1, wherein according to a previous temporal domain dependency relationship under an HEVC-RA coding structure, a feature of the new generation encoder AV1 and a video sequence feature, an aggregation distortion of a current coding unit and an affected future coding unit is estimated and ta propagation factor of the current coding unit in a temporal domain distortion propagation model is calculated by constructing a temporal domain distortion propagation chain, wherein a Lagrange multiplier is adjusted through a more accurate propagation factor to realize a temporal domain dependency rate distortion optimization, and a relationship of QP-? is re-corrected and an I frame is adjusted to achieve a better coding effect.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: August 16, 2022
    Assignee: UNIVERSITY OF ELECTRONIC SCIENCE AND TECHNOLOGY OF CHINA
    Inventors: Ce Zhu, Han Qin, Yonghua Wang, Yipeng Liu, Kai Liu