Abstract: A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.

Abstract: A multi-valued logic device having an improved reliability includes a conversion unit configured to convert a multi level signal into a plurality of partial signals; and a plurality of nonvolatile memory devices configured to individually store the plurality of partial signals, wherein a number of bits of each of the plurality of partial signals individually stored in the plurality of nonvolatile memory devices is less than the number of bits of the multi level signal.

Abstract: Disclosed herein is a method of finding an isotopic cluster in a polypeptide and determining the monoisotopic mass of the cluster. The method comprises an algorithm for finding an isotopic cluster based on a probabilistic model, defined by each of peaks in the isotopic cluster, and determining the monoisotopic mass of the isotopic cluster. The probabilistic model of the isotopic cluster includes characteristic functions for mass, that is, a function of the ratio of two peak intensities, and a function of the product of two ratios obtained from three peaks. These characteristic functions for mass define the shape of peaks acceptable in an actual isotopic cluster for the mass of any isotopic cluster. The algorithm of finding the isotopic cluster based on the functions uses the characteristics to score the degree of the approximation of any isotopic cluster to the spectral shape of a theoretical cluster.

Abstract: Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer 60 is formed on a part corresponding to a channel region 4 on the silicon substrate 1. The ferroelectric layer 60 made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.

Abstract: An intelligent U-City middleware apparatus and the U-City adopting the same are disclosed. The intelligent U-City middleware apparatus provides intelligent service based on context-awareness and a variety of intelligent ubiquitous convergence services for the applications of U-City. It is composed of four layers: Common Device Interface Layer, Context-aware Computing Layer, Ubiquitous Core Computing Layer and Common Application Interface Layer. The layers cooperate to give intelligent ubiquitous convergence services and provide the advantages of layered architecture.

Abstract: Disclosed herein are a ferroelectric material that can be effectively used in manufacturing various electric and electronic elements, and a method of forming a ferroelectric layer using the ferroelectric material. The ferroelectric material in accordance with the present invention is composed of a mixture of an inorganic ferroelectric material and an organic ferroelectric material. The method of forming a ferroelectric layer includes: preparing a mixed solution of an inorganic ferroelectric material and an organic material; forming a ferroelectric film by applying the mixed solution onto a substrate; and forming a ferroelectric layer by annealing the ferroelectric film.

Abstract: Disclosed herein are a field-effect transistor (FET), a ferroelectric memory device, and methods of manufacturing the same. The FET and the ferroelectric memory device in accordance with the present invention include: a substrate 1; source and drain regions 2 and 3 formed on the substrate; a channel layer 4 formed between the source and drain regions 2 and 3; and a ferroelectric layer 5 formed on the channel layer 4, the ferroelectric layer 5 being composed of a mixture of an inorganic ferroelectric material and an organic material. The ferroelectric layer 5 is formed in a manner that a mixed solution of an inorganic ferroelectric material and an organic material is applied onto the substrate and then subjected to annealing and etching processes.

Abstract: An apparatus and a method for generating a high resolution image of a human body using a terahertz electromagnetic wave and an endoscope using the same are disclosed. In accordance with the present invention, a third laser beam and a terahertz electromagnetic wave excited by a first laser beam are radiated on a portion of a human body having a contrast agent adhered thereto to generate a high resolution image based on the terahertz electromagnetic wave reflected from the portion of the human body and a second laser beam.

Abstract: The present invention relates to a ferrodielectric memory device and a method for manufacturing the same that provide stable memory operations by considerably enhancing characteristics of hysteresis and remanent polarization in ferrodielectrics applied to memory devices. In the present invention, PVDF having a crystal structure of ?-phase is used as a ferrodielectric substance applied to the ferrodielectric memory. The PVDF membrane in accordance with the present invention has excellent hysteresis characteristics that show a polarization of about 5 ?C/cm2 or more at about 1V as the polarization is increased with increasing of an applied voltage in about 0 to 1V, and have another polarization of about ?5 ?C/cm2 or less at about ?1V as the polarization is decreased with decreasing of an applied voltage in about ?1V.

Abstract: Disclosed relates to a method of coating or stacking an organic material to form an organic layer on a semiconductor substrate such as silicon, GaAs, etc. In the present invention, a polished semiconductor substrate is soaked in silanes, KOH, or a mixed solution of H2SO4 and H2O2. As a result, H-groups or OH-groups are generated on the surface of the semiconductor surface, which results in van der Waals bonding or hydrogen bonding between the semiconductor substrate and the organic material, thus forming the organic layer on the semiconductor substrate.

Abstract: Disclosed relates to a ferroelectric memory device that is manufactured easily, operates at low voltage and has excellent data preservation period, and a method of manufacturing the same. In the present invention, a ferroelectric layer (60) is formed on a part corresponding to a channel region (4) on the silicon substrate (1). The ferroelectric layer (60) made of an organic material such as PVDF, etc. shows polarization characteristics at low voltage below 1V, and such polarization characteristics continue over a specific time period, not changed as time goes by. Accordingly, it is possible to manufacture a ferroelectric memory device that operates at low voltage and is manufactured with a simplified structure in a simplified method.