Abstract: A method of controlling a reactive sputter deposition process includes selecting a control process parameter for a target material and a reactive gas, the target material included in a target acting as a cathode, the reactive sputter deposition process involving forming a compound from a reaction between the target material and reactive gas species associated with the reactive gas in a vacuum chamber; establishing an operation regime for the reactive sputter deposition process for a given target power; and performing, based on the selected control process parameter and the established operation regime, the reactive sputter deposition process in a transition region between a metallic mode and a covered mode through a controlled pulsed reactive gas flow rate into the vacuum chamber, such that a stabilized reactive deposition of the compound on a substrate is achieved, the deposited compound on the substrate comprising a dielectric stoichiometric film.
Type:
Grant
Filed:
August 20, 2015
Date of Patent:
May 2, 2017
Assignees:
University of West Bohemia in Pilsen, TRUMPF Huettinger Sp. z o. o.
Inventors:
Rafal Bugyi, Jaroslav Vlcek, Jiri Rezek, Jan Lazar