Abstract: Resist compositions containing silicon, boron, or both silicon and boron may be used with ultra-violet lithography processes and extreme ultra-violet (EUV) lithography processes to increase the reactive ion etch resistance of the resist compositions, improve transmission of the resist materials, and to dope substrates.
Type:
Grant
Filed:
March 12, 2004
Date of Patent:
February 5, 2008
Assignees:
Cornell Research Foundation, Inc., University of Wisconsin-Madison
Inventors:
Junyan Dai, Christopher K. Ober, Lin Wang, Franco Cerrina, Paul Nealey