Abstract: A semiconductor device including a Horizontal Current Bipolar Transistor (HCBT) and methods of manufacture. The device has a semiconductor substrate of a first conductivity type defining a wafer plane parallel to the semiconductor substrate and has a base region and a collector region forming a first metallurgical junction. The device also has an emitter region forming a second metallurgical junction with the base region. A flat portion of the first metallurgical junction and a flat portion of the second metallurgical junction are substantially parallel to each other and close an acute angle with the wafer plane. At least a portion of the base region comprises silicon-germanium alloy or silicon-germanium-carbon alloy.

Abstract: A device for measurement of temperature or other physical quantities in one or more test points where the transmission of signal and energy between a rotating mechanical element and a stationary part of a system is realized by contactless transmission, wherein a contactless signal transmission is based on a differential capacitive coupling, and a contactless energy transmission is based on an inductive coupling. Measurement of high operating temperatures on a rotating clutch component is obtained by using resistive sensors which have a small mass and volume requirement. Ultra low power consumption is achieved by using resistive temperature sensors, low power sensor signal modulator, signal transmission based on the differential capacitive coupling, and power supply that allows operation from low input voltages induced in the receiving coil for collecting the energy from the magnetic field.

Abstract: A horizontal current bipolar transistor comprises; an n-hill layer on a substrate, forming a first pn-junction with the substrate; a n+ diffusion layer on the substrate, adjacent to the n-hill layer, forming a n+n junction with the n-hill layer; an intrinsic base layer on the n-hill layer and comprising a portion of a sidewall inclined at an acute angle to the substrate plane, forming a second pn-junction with the n-hill layer; an extrinsic base layer on the n-hill layer, forming a third pn-junction with the n-hill layer, and a p+p junction with the intrinsic base layer; a field limiting region on the n-hill layer, forming a fourth pn-junction with the n-hill layer. The field limiting region is spatially separated from the extrinsic base layer and the n+ diffusion layer. The extrinsic base layer and the field limiting region exhibit substantially equal impurity dopant distribution decay towards the substrate.

Abstract: A radiofrequency transmitter comprises a negative impedance converter having an input port and an output port; a first antenna electrically coupled to the input port of said negative impedance converter and operatively configured to emit electromagnetic radiation of a first polarization; and a second antenna electrically coupled to the output port of the negative impedance converter and operatively configured to emit electromagnetic radiation of a second polarization. The radiofrequency transmitter is operatively configured to emit an oscillating signal having a first frequency.

Abstract: A radiofrequency transmitter comprises a negative impedance converter having an input port and an output port; a first antenna electrically coupled to the input port of said negative impedance converter and operatively configured to emit electromagnetic radiation of a first polarization; and a second antenna electrically coupled to the output port of the negative impedance converter and operatively configured to emit electromagnetic radiation of a second polarization. The radiofrequency transmitter is operatively configured to emit an oscillating signal having a first frequency.

Abstract: A horizontal current bipolar transistor comprises; an n-hill layer on a substrate, forming a first pn-junction with the substrate; a n+ diffusion layer on the substrate, adjacent to the n-hill layer, forming a n+n junction with the n-hill layer; an intrinsic base layer on the n-hill layer and comprising a portion of a sidewall inclined at an acute angle to the substrate plane, forming a second pn-junction with the n-hill layer; an extrinsic base layer on the n-hill layer, forming a third pn-junction with the n-hill layer, and a p+p junction with the intrinsic base layer; a field limiting region on the n-hill layer, forming a fourth pn-junction with the n-hill layer. The field limiting region is spatially separated from the extrinsic base layer and the n+ diffusion layer. The extrinsic base layer and the field limiting region exhibit substantially equal impurity dopant distribution decay towards the substrate.

Abstract: A photodiode detector array comprises: a substrate comprising a front surface and a mounting surface; a first active region and a second active region, each of said first and second active regions being operatively configured to detect electromagnetic radiation in a wavelength range, and each of said first and second active regions being formed within said substrate and disposed proximate to said front surface; and a layer formed within said substrate and disposed proximal to said mounting surface, wherein said layer exhibits an electromagnetic wave absorption coefficient greater than or equal to 3×103 cm-1 in the wavelength range from 500 nm to 800 nm.

Abstract: This application discloses apparatuses and methods for controlling a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

Abstract: A horizontal current bipolar transistor comprises a substrate of first conductivity type, defining a wafer plane parallel to said substrate; a collector drift region above said substrate, having a second, opposite conductivity type, forming a first metallurgical pn-junction with said substrate; a collector contact region having second conductivity type above said substrate and adjacent to said collector drift region; a base region comprising a sidewall at an acute angle to said wafer plane, having first conductivity type, and forming a second metallurgical pn-junction with said collector drift region; and a buried region having first conductivity type between said substrate and said collector drift region forming a third metallurgical pn-junction with the collector drift region. An intercept between an isometric projection of said base region on said wafer plane and an isometric projection of said buried region on said wafer plane is smaller than said isometric projection of said base region.

Abstract: A connected optical waveguide structure comprises n four-port optical couplers, where n is greater than one; and n waveguide loops, each loop having a corresponding perimeter; wherein each of the n perimeters is different from each of the other n?1 perimeters. In one embodiment, for any pair of the n loops, the ratio of the larger perimeter to the smaller perimeter is greater than five halves (5/2).

Abstract: This application discloses apparatuses and methods for selecting and tuning of a select mode of a multi-longitudinal mode device seeded or wavelength locked to a spectrum-sliced external wavelength by either self-seeding or broadband light-source seeding through an array-waveguide grating.

Abstract: Embodiments generally relate to an optical waveguide component configured for operation with amplitude modulated optical signals at a line rate. The optical waveguide component includes a first optical waveguide segment having a first port and a second port; and a plurality of second optical waveguides each forming a closed loop. Each of the second optical waveguides is electromagnetically coupled to the first optical waveguide exactly once, and each of the closed loops has a round trip time. A product of the line rate and each of the round-trip times is equal to or greater than unity.

Abstract: A fault-tolerant control system and method for variable-speed variable-pitch wind turbines with an inverter-fed generator. When generator faults are detected, the generator torque and/or flux is limited to prevent propagation of the faults and possible failure and shutdown of the generator. The control system and method improves on two-loop control methods for variable-speed variable-pitch wind turbines and provides improved power delivery under fault conditions.