Abstract: A transistor structure includes a first oxide semiconductor layer, a source structure and a drain structure, and a second oxide semiconductor layer. The first oxide semiconductor layer is doped with sulfur. The source structure and the drain structure are disposed on the first oxide semiconductor layer, and a region of the first oxide semiconductor layer between the source structure and the drain structure forms a channel region. The second oxide semiconductor layer doped with sulfur is at least formed on the channel region of the first oxide semiconductor layer.

Abstract: The present invention provides a semiconductor structure, including a substrate having a first conductivity region and a second conductivity region defined thereon, a plurality of first fin structures and at least one first gate structure disposed on the substrate and within the first conductivity region, a plurality of second fin structures and at least one second gate structure disposed on the substrate and within the second conductivity region, at least two first crown epitaxial layers disposed within the first conductivity region, a plurality of second epitaxial layers disposed within the second conductivity region, where the shape of the first crown epitaxial layer is different from that of the second epitaxial layer.

Abstract: A transistor array for testing is provided. The transistor array includes a plurality of tested units. Each of the tested unit includes a tested transistor and a first to third switches. The tested transistor has a control terminal, a first and a second terminals and a bulk. The first switch is coupled between the first terminal and a leakage transporting line. The second switch is coupled between the second terminal and the leakage transporting line. The third switch is coupled between the control terminal and a bias providing line. The first to third switches are turned on or turned off according to a control signal. When the tested transistor is selected to be tested, the first to third switches are turned on according to the control signal.