Abstract: A silicon precursor compound, a preparation method therefor, a silicon-containing film formation composition containing the silicon precursor compound are disclosed. A method for forming a silicon-containing film by using the silicon-containing film formation composition is also disclosed. The silicon-containing film formation composition contains a silicon precursor compound having a specific structure so that the thickness of a silicon-containing film can be controlled to be very thin through atomic layer deposition (ALD), and, when a silicon-containing composite film is formed by combining an ALD cycle that forms a silicon-containing film and an ALD cycle that forms a film containing another metal, the silicon amount of the silicon-containing composite film can be finely controlled to be in a low range.

Abstract: A silicon precursor compound, a composition for forming a silicon-containing film, wherein the composition contains the compound; and a method for forming a silicon-containing film by using the composition for forming a silicon-containing film are disclosed. The composition for forming a silicon-containing film includes a silicon precursor compound having a specific structure, thus making it possible to achieve the self-limiting film growth of ALD over a wide temperature range of 150° C. to 850° C., control the thickness of the silicon-containing film to be extremely thin and uniform, and form a film having excellent coverage and uniformity even on a substrate having a complex shape, and furthermore, further improve the characteristics of a semiconductor device.

Abstract: A method for forming a silicon-containing film and a silicon-containing film formed by the method are disclosed. The method for forming a silicon-containing film can use a composition for forming a silicon-containing film including a silicon precursor compound having a specific structure to efficiently form a silicon-containing film including a silicon-containing oxide film or a silicon-containing composite metal oxide film at a high temperature of 600° C. or more, control the silicon-containing film to have a thickness and composition of a desired film, and form a silicon-containing film having excellent coverage and uniformity even on a substrate with a complex shape.

Abstract: The present disclosure relates to a novel aluminum-containing compound, a method of preparing the aluminum-containing compound, a precursor composition for forming a film including the aluminum-containing precursor compound, and a method of forming an aluminum-containing film using the precursor composition for forming a film.

Abstract: The present application relates to a silicon precursor compound, a method for preparing the silicon precursor compound, a precursor composition for depositing a silicon-containing oxide thin film or nitride thin film, the precursor composition comprising the silicon precursor compound, and a method for depositing a silicon-containing oxide thin film or nitride thin film using the precursor composition.

Abstract: The present disclosure provides a novel Group 4 metal element-containing compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for film deposition, and a method of forming a Group 4 metal element-containing film using the Group 4 metal element-containing compound. The novel Group 4 metal element-containing compound according to embodiments of the present disclosure makes it possible to form a Group 4 metal element-containing film by atomic layer deposition at a higher temperature than conventionally known Group 4 metal element-containing compounds.

Abstract: Liquid precursor compositions are provided, along with methods of preparing the liquid precursor compositions, and methods for forming layers using the liquid precursor composition, for example in vapor deposition processes such as CVD and ALD. In some embodiments, the liquid precursor compositions comprise a metal compound of the formula M(DAD)2, where M is Co or Ni and DAD is a diazadiene ligand.

Abstract: The present invention provides a heat shock protein expression-inducing agent, more specifically, a heat shock protein expression-inducing agent comprising a compound represented by formula (I): wherein R is a lower alkyl, phenyl, or hydroxyphenyl, or a salt thereof.

Abstract: The present disclosure relates to a novel Group 5 metal compound, a method for preparing the Group 5 metal compound, a precursor composition for depositing a Group 5 metal-containing layer containing the Group 5 metal compound, and a method for depositing a Group 5 metal-containing layer using the precursor composition for depositing a Group 5 metal-containing layer.

Abstract: The present invention provides a heat shock protein expression-inducing agent, more specifically, a heat shock protein expression-inducing agent comprising a compound represented by formula (I): wherein R is a lower alkyl, phenyl, or hydroxyphenyl, or a salt thereof.

Abstract: The present invention relates to a method for forming a silicon-containing thin film using a chlorosilane compound represented by SinCl2n+2 (wherein, n is an integer of from about 3 to about 10), and a high-quality silicon nitride thin film can be formed to a uniform thickness on a surface including a protrusion or recess having a high aspect ratio by an atomic layer deposition method using an ammonia gas at a low temperature of particularly about 560° C. or less.

Abstract: The present invention relates to a copper metal film to be used as a seed layer for electrodeposition for forming a copper interconnect for a semiconductor device, a method for preparing the same, and a method for forming a copper interconnect for a semiconductor device using the copper metal film.

Abstract: The present invention relates to a composition containing as its main component proanthocyanidin oligomer to which a substance having a phloroglucinol ring structure or resorcinol ring structure has been bonded and reduced in the molecular weight, which is obtained by heating plant materials containing proanthocyanidin polymer or extract thereof with a substance having a phloroglucinol ring structure or resorcinol ring structure in an acidic aqueous solution, production method thereof, and uses of the composition in health products and pharmaceutical products. According to the invention, proanthocyanidin oligomer having physiological activity, to which a substance having a phloroglucinol ring structure or resorcinol ring structure has been bonded and reduced in the molecular weight to such a level that the oligomer can be absorbed into living body, which has been conventionally difficult to obtain at high yield from plant raw materials, can be produced efficiently and easily.

Abstract: The present disclosure provides a Group 4 metal element-containing novel alkoxy compound, a method of preparing the Group 4 metal element-containing alkoxy compound, a precursor composition including the Group 4 metal element-containing alkoxy compound for depositing a film, and a method of depositing a Group 4 metal element-containing film using the precursor composition.

Abstract: Liquid precursor compositions are provided, along with methods of preparing the liquid precursor compositions, and methods for forming layers using the liquid precursor composition, for example in vapor deposition processes such as CVD and ALD. In some embodiments, the liquid precursor compositions comprise a metal compound of the formula M(DAD)2, where M is Co or Ni and DAD is a diazadiene ligand.

Abstract: The present disclosure provides a Group 4 metal element-containing novel compound, a method of preparing the Group 4 metal element-containing compound, a precursor composition including the Group 4 metal element-containing compound for depositing a film, and a method of depositing a Group 4 metal element-containing film using the precursor composition.

Abstract: The present disclosure relates to a novel ruthenium compound, a method for preparing the ruthenium compound, a precursor composition for depositing a ruthenium-containing film including the ruthenium compound, and a method for depositing a ruthenium-containing film by using the precursor composition.

Abstract: A method for induction of a heat shock protein, anti-stress or regulation of an autonomic nerve comprises: administering a mammalian subject in need thereof a composition comprising an effective amount of hydroxymethylfurfural derivative of the following formula: wherein R is selected from the group consisting of formula (I): (II): HOOCCH2COCO—, (III): HOOCCH2CH2COCO—, and (IV): a hydrogen atom.

Abstract: A compound is represented by Formula (I) or (II) described below. A medicine includes, as an active ingredient, a compound represented by Formula (I), (II), or (III) described below.

Abstract: The invention relates to sense oligonucleotide having a sequence complementary to a single-stranded RNA (antisense transcript) having a sequence complementary to mRNA of iNOS gene in order to control expression of iNOS (inducible nitric oxide synthase). The sense oligonucleotide of the present invention can control expression of iNOS and is useful for biological defense and treatment and prevention of diseases related to excessive production of NO, such as cancerogenesis, inflammatory disease, endotoxin shock by bacterial infection and the like.