Abstract: A controller of a buck-boost conversion circuit and a mode switching method thereof are provided. The controller control operations of multiple switches of the buck-boost conversion circuit to convert an input voltage into an output voltage and provide an output current. The controller includes a slope compensation circuit, a control loop, and a mode switching circuit. The slope compensation circuit generates a slope compensation signal according to a mode switching signal of a current cycle. The control loop is coupled to the slope compensation circuit and the switches respectively, and is configured to generate multiple switch control signals according to the slope compensation signal, a feedback voltage related to the output voltage, and a current sense signal related to the output current to control the operations of the switches respectively. The mode switching circuit is coupled to the slope compensation circuit and the control loop.

Abstract: Provided is a power transistor device including a substrate, a first electrode, and a second electrode. The substrate has an active region and a terminal region. The terminal region surrounds the active region. The substrate includes a first trench and a second trench. The first trench is disposed within the active region and adjacent to the terminal region. The second trench is disposed within the terminal region and adjacent to the active region. The first electrode and the second electrode are respectively disposed in the first trench and the second trench. The first electrode and the second electrode both are electrically floating.

Abstract: A power metal oxide semiconductor (MOS) transistor die with a temperature sensing function and an integrated circuit are provided. The power MOS transistor die has a control terminal, a phase terminal, a ground terminal and a temperature signal output terminal, and that further includes a power switch part and a temperature sensing part. The power switch part has: a first electrode coupled to the control terminal; a second electrode coupled to the ground terminal; and a third electrode coupled to the phase terminal. The temperature sensing part has: a first electrode; a second electrode coupled to the temperature signal output terminal; and a third electrode coupled to the third electrode of the power switch part. The power switch part and the temperature sensing part are configured as a MOS transistor made by a same manufacturing process, and are capable of sensing temperature precisely.