Abstract: A semiconductor light emitting element according to the present invention is obtained by forming a first semiconductor layer, an active layer, and a second semiconductor layer on a substrate. The semiconductor light emitting element includes a first insulating layer, a first electrode, and a second electrode. The first insulating layer is formed in a position closer to the substrate than the first semiconductor layer in a first direction orthogonal to a surface of the substrate and is formed so as to protrude outward from a first surface being a surface on a side of the substrate of the first semiconductor layer as seen in the first direction. A first region where the first surface and the first insulating layer face each other and a second region where the first surface and the first electrode face each other are spaced apart in a direction parallel to the surface of the substrate.

Abstract: A nitride semiconductor light-emitting device having high luminous efficiency is provided. A nitride semiconductor light-emitting device is provided with a nitride semiconductor substrate including a main surface having an off angle of 0.4° or larger with respect to a (0001) plane, a first semiconductor layer formed of an n-type or p-type nitride semiconductor formed on the main surface, a second semiconductor layer formed of a nitride semiconductor having In composition of 2% or higher formed on the first semiconductor layer, an active layer formed on the second semiconductor layer including a well layer formed of a nitride semiconductor having In composition higher than that of the second semiconductor layer and a barrier layer formed of a nitride semiconductor stacked therein, and a third semiconductor layer formed on the active layer having a conductivity type different from that of the first semiconductor layer.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1-x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1-xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1-xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: Disclosed herein is a semiconductor laser device utilizing a sub-mount substrate that is capable of having a further sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline sub-mount substrate having a crystalline structure including a first crystalline plane (c-plane) having a normal line direction on a first crystalline axis (c-axis) and a second crystalline plane (a-plane) having a normal line direction on a second crystalline axis (a-axis) having a higher thermal conductivity than the first crystalline axis; and a semiconductor laser chip configured to be joined to a side of a first surface of the sub-mount substrate. The first crystalline plane inclines with respect to the first surface of the sub-mount substrate.

Abstract: Disclosed herein is a semiconductor laser device utilizing a monocrystalline SiC substrate that is capable of assuring a sufficient heat dissipation property. The semiconductor laser device comprises: a monocrystalline SiC substrate having an electrical conductivity, the substrate having a first surface and a second surface; and a semiconductor laser chip (LD chip) arranged on the first surface. Also, the semiconductor laser device may comprise an insulating film arranged at a side of the first surface of the SiC substrate and configured to insulate a first electric conductive layer onto which the semiconductor laser chip is mounted and an electric conductive member (a second electric conductive layer and a heatsink portion) to be joined to a side of the second surface of the SiC substrate.

Abstract: An aluminium gallium indium phosphide (AlGaInP)-based semiconductor laser device is provided. On a main surface of a semiconductor substrate formed of n-type GaAs (gallium arsenide), from the bottom layer, an n-type buffer layer, an n-type cladding layer formed of an AlGaInP-based semiconductor containing silicon (Si) as a dopant, an active layer, a p-type cladding layer formed of an AlGaInP-based semiconductor containing magnesium (Mg) or zinc (Zn) as a dopant, an etching stopper layer, and a p-type contact layer are formed. Here, when an Al composition ratio x of the AlGaInP-based semiconductor is taken as a composition ratio of Al and Ga defined as (AlxGa1?x)0.5In0.5P, a composition of the n-type cladding layer is expressed as (AlxnGa1?xn)0.5In0.5P (0.9<xn<1) and a composition of the p-type cladding layer is expressed as (AlxpGa1?xp)0.5In0.5P (0.9<xp?1), and xn and xp satisfy a relationship of xn<xp.

Abstract: Provided is a multi-beam semiconductor laser device in which deterioration of element characteristics is suppressed even when a beam pitch is reduced. The multi-beam semiconductor laser device includes: a first semiconductor multilayer in which a plurality of semiconductor layers are laminated; a plurality of light emitting ridge portions that are formed on the first semiconductor multilayer; a support electrode portion formed in a region between a pair of neighboring light emitting ridge portions; and a front ridge portion formed on the front side of the support electrode portion. The support electrode portion is electrically connected to one of the pair of neighboring light emitting ridge portions. The support electrode portion is higher than the one light emitting ridge portion. An end of the front ridge portion on the front end surface side is higher than the one light emitting ridge portion at the front end surface.