Abstract: The present invention is directed to a process for depositing a thin-film layer of magnetic material onto an insulative dielectric layer of a semiconductor substrate such that the layer of magnetic material completely and permanently adheres to the insulative dielectric layer. A product within the scope of the present invention is prepared by taking a semiconductor substrate, such as a silicon wafer, and through a chemical-vapor deposition process depositing a layer of an insulative dielectric (such as the silicon dioxide or silicon nitride) on the layer, and subsequently depositing a layer of a magnetic material (such as a nickel-iron alloy or a manganese-bismuth alloy) through a sputtering process onto the insulative dielectric layer.