Patents Assigned to Utilight Ltd.
  • Patent number: 9960286
    Abstract: A bus bar for a silicon solar cell. The bus bar is a strip of electrically conductive material with a plurality of protrusions extending from at least one side of the bus bar.
    Type: Grant
    Filed: November 24, 2014
    Date of Patent: May 1, 2018
    Assignee: UTILIGHT LTD.
    Inventor: Moshe Finarov
  • Patent number: 9616524
    Abstract: A method of depositing a material on a receiving substrate, the method comprising: providing a source substrate having a back surface and a front surface, the back surface carrying at least one piece of coating material; providing a receiving substrate positioned adjacent to the source substrate and facing the coating material; and radiating light towards the front surface of the source substrate, to remove at least one piece of the coating material from the source substrate and deposit said removed at least one piece onto the receiving substrate as a whole.
    Type: Grant
    Filed: June 18, 2009
    Date of Patent: April 11, 2017
    Assignee: Utilight Ltd.
    Inventors: Mikhael Matusovsky, Amir Noy, Moshe Finarov, Giora Dishon
  • Patent number: 8652872
    Abstract: A photovoltaic cell, the cell comprising: a silicon substrate of bulk silicon material having front and rear surfaces; an emitter layer on the rear surface of said substrate; elongate channels through the emitter layer; elongate contacts to the bulk of the silicon substrate within at least some of the elongate channels, wherein the contacts are narrower than the channels; and gaps in the emitter between at least some of the elongate contacts and the emitter layer on the sides of the contacts.
    Type: Grant
    Filed: October 12, 2009
    Date of Patent: February 18, 2014
    Assignee: Utilight Ltd.
    Inventors: Moshe Finarov, Mikhael Matusovsky, Amir Noy
  • Publication number: 20110197965
    Abstract: A photovoltaic cell, the cell comprising: a silicon substrate of bulk silicon material having front and rear surfaces; an emitter layer on the rear surface of said substrate; elongate channels through the emitter layer; elongate contacts to the bulk of the silicon substrate within at least some of the elongate channels, wherein the contacts are narrower than the channels; and gaps in the emitter between at least some of the elongate contacts and the emitter layer on the sides of the contacts.
    Type: Application
    Filed: October 12, 2009
    Publication date: August 18, 2011
    Applicant: Utilight Ltd.
    Inventors: Moshe Finarov, Mikhael Matusovsky, Amir Noy