Patents Assigned to UTMC Microelectronics Systems Inc.
  • Method for making recessed field oxide for radiation hardened microelectronics
    Patent number: 6063690
    Abstract: A method of forming a recessed electrically-insulating field oxide region in a semiconductor substrate is disclosed.
    Type: Grant
    Filed: December 29, 1997
    Date of Patent: May 16, 2000
    Assignee: UTMC Microelectronics Systems Inc.
    Inventors: Richard L. Woodruff, David B. Kerwin, John T. Chaffee