Abstract: There is described a photodetector for detecting incoming infrared light. The photodetector generally has a substrate; an i-type semiconductor region extending along the substrate, the i-type semiconductor region being sandwiched between a p-type semiconductor region and an n-type semiconductor region; a grating coupler being optically connected to one of two ends of the i-type semiconductor region, the grating coupler redirecting incoming infrared light into and along the i-type semiconductor region via the one of the two ends of the i-type semiconductor region for propagation of infrared light along the i-type semiconductor region; and a photocurrent detection circuit electrically connected to the p-type semiconductor region and to the n-type semiconductor region for detecting a photocurrent resulting from said propagation.
Type:
Grant
Filed:
October 3, 2018
Date of Patent:
June 30, 2020
Assignees:
THE ROYAL INSTITUTION FOR THE ADVANCEMENT OF LEARNING/MCGILL UNIVERSITY, VALORBEC L.P.
Inventors:
Monireh Moayedi Pour Fard, Christopher Williams, Glenn Cowan, Odile Liboiron-Ladouceur