Abstract: A thin-film substrate includes an Al2O3 single crystal base substrate, and a VO2 functional thin film disposed on the base substrate and doped with Ti, wherein, when R1 is a resistance at a temperature of 25° C. and R2 is a resistance at a temperature of 80° C., the functional thin film has an R1/R2 of 104 or more, and when a heating process from 25° C. to 80° C. and a cooling process from 80° C. to 25° C. are referred to as one cycle, a variation (V?T) in hysteresis temperature difference (?T) of the functional thin film during 10 cycles may be 1° C. or lower, a variation (VTMI) in phase transition temperature (TMI) of the functional thin film during 10 cycles may be 1.5° C. or lower, and a variation rate (VR1/R2) of R1/R2 of the functional thin film during 10 cycles may be 5% or less.

Abstract: A heating system of the present disclosure includes: a heating element configured to generate heat; a thermoelectric device disposed adjacent to the heating element; and a switching device electrically connected to the thermoelectric device and configured to maintain a temperature of the heating element within a set temperature range by switching current that is supplied to the thermoelectric device based on the temperature of the heating element.

Abstract: The present technology relates to an oxide thin film. The oxide thin film of the present technology may include a single crystal substrate; and a main oxide layer laminated on the single crystal substrate and doped with dissimilar metal elements, wherein in energy-dispersive X-ray spectroscopy (EDX) using a transmission electron microscope (TEM), the dissimilar metal elements and metal elements of a metal oxide constituting the main oxide layer may be uniformly distributed. The present technology may provide an oxide thin film showing MIT characteristics of improved reliability, sensitivity, accuracy, and reproducibility.