Abstract: A voltage equalization method for use in a radiofrequency switch having multiple transistors connected in series and the radiofrequency switch. In the voltage equalization method, capacitors are additionally provided as parasitic capacitances between source electrodes and drain electrodes of transistors (M1-MN) connected in series to compose a radiofrequency switch, and voltage drop uniformity is implemented for the transistors (M1-MN) by adjusting the parasitic capacitances of the transistors (M1-MN). By means of different combinations of the positions, sizes, and spacing of metal bars on a first metal layer (1) and on a second metal layer (2), the parasitic capacitances between the source electrodes and the drain electrodes of the transistors (M1-MN) can be finely adjusted, thus increasing the voltage drop uniformity of the transistors (M1-MN). The method uses less transistors to accomplish the design of the radiofrequency switch.

Abstract: Disclosed are a radio frequency switch circuit, a chip, and a communication terminal. In the radio frequency switch circuit, a switch chain is formed by at least one switch unit being provided between a first port and a second port; each switch unit is connected to a first bias circuit and to a second bias circuit; further adjustments are made to the ratio of the parasitic capacitance between MOS transistors of each switch unit to a third capacitance; and adjustments are made to the size of said MOS transistors as well as to the ratio of said size to the third capacitance. In this way, voltage distribution uniformity on the switch chain may be improved, thus increasing the overall voltage withstand ability of the radio frequency switch circuit, and reducing the occurrence of harmonic events.

Abstract: Disclosed are a radiofrequency power amplifier module having high linearity and power-added efficiency and an implementation method. The radiofrequency power amplifier module comprises a bias circuit, a linearization circuit, and a power amplifier circuit. The power amplifier circuit is connected to the linearization circuit. The linearization circuit is connected to the bias circuit. The bias circuit is connected to the power amplifier circuit. In the present invention, the linearization circuit is utilized to capture a radiofrequency signal inputted from a radiofrequency signal input end of the power amplifier circuit, the captured radiofrequency signal is fed back to the bias circuit, a corresponding bias current is generated by the bias circuit on the basis of the radiofrequency signal fed back, and the bias current is inputted to the power amplifier circuit, thus increasing the linearity and power-added efficiency of an output signal of the radiofrequency power amplifier.

Abstract: A voltage equalization method for use in a radiofrequency switch having multiple transistors connected in series and the radiofrequency switch. In the voltage equalization method, capacitors are additionally provided as parasitic capacitances between source electrodes and drain electrodes of transistors (M1-MN) connected in series to compose a radiofrequency switch, and voltage drop uniformity is implemented for the transistors (M1-MN) by adjusting the parasitic capacitances of the transistors (M1-MN). By means of different combinations of the positions, sizes, and spacing of metal bars on a first metal layer (1) and on a second metal layer (2), the parasitic capacitances between the source electrodes and the drain electrodes of the transistors (M1-MN) can be finely adjusted, thus increasing the voltage drop uniformity of the transistors (M1-MN). The method uses less transistors to accomplish the design of the radiofrequency switch.

Abstract: Disclosed are a surge protection device and a chip constituted thereby, and a communication terminal. The surge protection device comprises an input pad and an output pad. The input pad is connected to a power supply voltage, and the output pad is connected to a ground wire. NMOS transistor groups are provided between the input pad and the output pad. The NMOS transistor groups are connected to the input pad and the output pad respectively by means of metal wires. The structures of the metal wires between the NMOS transistor groups and the input pad and the output pad respectively and/or the structures of the NMOS transistor groups are changed to reduce or cancel non-uniform turn-on of the NMOS transistor groups caused by metal wires having different lengths from the NMOS transistor groups to the input pad and the output pad respectively along a power supply voltage wire direction.

Abstract: Disclosed are a serial communication apparatus and a serial communication method. The serial communication apparatus comprises a radio frequency front-end module and a radio frequency device, a first input interface and a second input interface of the radio frequency front-end module being correspondingly connected to output interfaces of a main control module, a first output interface of the radio frequency front-end module being connected to a first input interface of the at least one radio frequency device via a first signal bus, a second output interface of the radio frequency front-end module being connected to a second input interface of the at least one radio frequency device via a second signal bus. The present invention satisfies requirements for convenient and rapid unidirectional communication between various chips of the radio frequency front-end module and inside the chips, reduces communication complexity, and increases transmission efficiency.

Abstract: Disclosed are a surge protection power supply clamping circuit, a chip and a communication terminal. The power supply clamping circuit comprises at least one driving unit and discharging unit; the discharging units are connected to the corresponding driving units respectively, and the driving units are connected to the same time delay unit respectively; the time delay units and the discharging units are connected to a power supply voltage and a ground line respectively. The driving units or the discharging units are sequentially controlled in the power supply voltage wiring direction, so that the sum values of an equivalent conduction resistance and an equivalent metal wiring resistance of respective discharging units are the same, and therefore, the uneven conduction of an NMOS transistor caused by different metal wiring resistances due to different metal wiring lengths of the NMOS transistor of each discharging unit can be counteracted.

Abstract: An anti-electromagnetic interference radio frequency module and an implementation method therefor. The anti-electromagnetic interference radio frequency module comprises a radio frequency module body, the inside of the radio frequency module body is provided with an electrical connection area (1) and a grounding area (2), a metal thin film structure (4) is attached to an upper surface and side surfaces of the radio frequency module body, and the metal thin film structure is connected to the grounding area, forming an anti-electromagnetic interference shielding layer structure which is integrated with the radio frequency module body. The radio frequency module achieves an anti-electromagnetic interference effect by means of the anti-electromagnetic interference shielding layer structure, so that electromagnetic interference generated around the radio frequency module is effectively isolated, thereby improving the performance of the radio frequency module.

Abstract: Disclosed in the present invention are a radio frequency front-end transmission module, a chip, and a communications terminal. In the radio frequency front-end transmission method, an output matching circuit of at least one transmission channel is connected to a switch unit, and is connected to a radio frequency transmission path by using the switch unit; an output matching circuit of another at least one transmission channel is directly connected to the radio frequency transmission path. By means of the present invention, a matched transmission channel can be selected according to different frequency bands in different modes, and a control unit controls on and off of a corresponding amplification unit and the switch unit, to implement output of radio frequency signals of different frequency bands in different modes.

Abstract: A multi-gain mode power amplifier, a chip, and a communication terminal. The multi-gain mode power amplifier comprises at least one amplifier circuit. The amplifier circuit comprises a bias circuit, a feedback circuit, a transistor (101), and an input matching network/output matching network. A bias voltage or a control voltage (120) is adjusted to make the feedback circuit to be either turned on or turned off, thus allowing the amplifier circuit to work in a high-gain mode or a low-gain mode. The multi-gain mode power amplifier has different gain modes, fully satisfies the actual demand of the communication terminal to work in the high-gain mode when transmitting a high power and to work in the low-gain mode when transmitting a low power.

Abstract: Disclosed are a radio frequency power amplifier for inhibiting a harmonic wave and stray, a chip and a communication terminal. The radio frequency power amplifier comprises a power source, an LDO circuit, a harmonic inhibition unit, a stray inhibition unit, an amplifying unit, and a low-pass matching network. On the one hand, by means of the power source being connected to the harmonic inhibition unit, harmonic waves and stray of the power source at a resonant frequency are inhibited. Additionally, by means of the stray inhibition unit reducing the gain of the amplifying unit at a resonant frequency, output of stray is reduced. On the other hand, by means of the low-pass matching network being embedded at an output end of the radio frequency power amplifier, harmonic waves and the stray of a radio frequency signal amplified by the amplifying unit at different frequencies is effectively inhibited.

Abstract: A variable signal flow control method for realizing chip reuse and a communication terminal for realizing chip reuse using the variable signal flow control method, the method comprises the following steps: using at least two identical integrated circuit (IC) chips, the respective IC chips achieving different flows of the control signals according to different logic control signals; controlling the logic control signals such that the respective IC chips achieves the flow of the corresponding control signals. The method can achieve control function of different signal flows for two identical IC chips, thereby greatly simplifying chip types for achieving IC system functions, greatly reducing development costs of the IC system and management complexity of the mass production supply chain.

Abstract: Provided is a harmonic suppression method, a corresponding low-noise amplifier (20, 30, 40), and a communication terminal. In the harmonic suppression method, an isolation unit (23, 33, 43) is arranged between a harmonic suppression unit (24, 34, 44) of the low-noise amplifier (20, 30, 40) and an output match network (25, 35, 45)/input match network (21, 31, 41). The harmonic suppression unit (24, 34, 44) is isolated from the output match network (25, 35, 45)/input match network (21, 31, 41) by means of the isolation unit (23, 33, 43), so that the two are not affected or compromised by each other, and can be designed separately. In this way, the design flexibility of a signal amplification circuit is greatly improved, and the design difficulty is reduced.

Abstract: A variable-frequency electric charge pump unit, a chip, and a communication terminal. The electric charge pump unit comprises a variable-frequency signal generator, an electric charge pump circuit, and a voltage detector connected in series. The variable-frequency signal generator outputs a clock signal for the electric charge pump circuit. The electric charge pump circuit generates an output voltage on the basis of the clock signal. The output voltage drives a load on the one hand and is connected to the voltage detector on the other hand. An output end of the voltage detector is connected to the variable-frequency signal generator. The working frequency of the variable-frequency signal generator can be adjusted dynamically on the basis of a requirement that a radiofrequency system work state has on the driving output of the electric charge pump unit.

Abstract: Disclosed in the present invention are a radio frequency power amplifier based on power detection feedback, a chip, and a communication terminal. The radio frequency power amplifier comprises multiple stages of amplifier circuits and at least one power detection feedback circuit; the input end of the power detection feedback circuit is connected to the output end of a current stage of amplifier circuit, and the output end of the power detection feedback circuit is connected to the input ends of the current stage of amplifier circuit and at least one stage of amplifier circuit located prior to the current stage of amplifier circuit. The power detection feedback circuit generates, according to the detected output power of the current stage of amplifier circuit, a control voltage varying inversely with the output power, so that the power detection feedback circuit outputs current varying positively with the control voltage.

Abstract: Disclosed are a radio frequency transistor for improving radio frequency switch performance, a chip and a mobile terminal. The radio frequency transistor comprises a first metal layer, a second metal layer, a polysilicon layer and an active area, the first metal layer being connected to the active area via contact holes, the first metal layer being connected to the second metal layer via through holes. The wiring direction of the second metal layer is perpendicular to the wiring direction of the polysilicon layer, thereby reducing parallel areas between the polysilicon layer and the first metal layer and decreasing the numbers of contact holes and through holes, so as to reduce the off capacitance. In addition, space saved by the first metal layer wiring and the contact holes is utilized, thereby increasing the channel width of the radio frequency transistor accommodated in a same chip area, and reducing the on-resistance.

Abstract: Disclosed are a radiofrequency power amplifier module having high linearity and power-added efficiency and an implementation method. The radiofrequency power amplifier module comprises a bias circuit, a linearization circuit, and a power amplifier circuit. The power amplifier circuit is connected to the linearization circuit. The linearization circuit is connected to the bias circuit. The bias circuit is connected to the power amplifier circuit. In the present invention, the linearization circuit is utilized to capture a radiofrequency signal inputted from a radiofrequency signal input end of the power amplifier circuit, the captured radiofrequency signal is fed back to the bias circuit, a corresponding bias current is generated by the bias circuit on the basis of the radiofrequency signal fed back, and the bias current is inputted to the power amplifier circuit, thus increasing the linearity and power-added efficiency of an output signal of the radiofrequency power amplifier.

Abstract: Disclosed are a radio frequency power amplifier for inhibiting a harmonic wave and stray, a chip and a communication terminal. The radio frequency power amplifier comprises a power source, an LDO circuit, a harmonic inhibition unit, a stray inhibition unit, an amplifying unit, and a low-pass matching network. On the one hand, by means of the power source being connected to the harmonic inhibition unit, harmonic waves and stray of the power source at a resonant frequency are inhibited. Additionally, by means of the stray inhibition unit reducing the gain of the amplifying unit at a resonant frequency, output of stray is reduced. On the other hand, by means of the low-pass matching network being embedded at an output end of the radio frequency power amplifier, harmonic waves and the stray of a radio frequency signal amplified by the amplifying unit at different frequencies is effectively inhibited.

Abstract: Disclosed in the present invention are a radio frequency power amplifier based on current detection feedback and a chip. The radio frequency power amplifier comprises multiple stages of amplifier circuits and at least one current detection feedback circuit; the input end of the current detection feedback circuit is connected to the input end of a current stage of amplifier circuit among the multiple stages of amplifier circuits by means of a corresponding resistor, and the output end of the current detection feedback circuit is connected to the input end of at least one stage of amplifier circuit prior to the current stage of amplifier circuit. The current detection feedback circuit generates, according to the detected quiescent operating current of the current stage of amplifier circuit, a control voltage varying inversely with the quiescent operating current, so that the current detection feedback circuit outputs current varying positively with the control voltage.

Abstract: A multimode power amplifier module, a chip and a communication terminal. In the module, a control circuit (104) sends a bias signal to a low-frequency power amplifier (102) or a high-frequency power amplifier (106) according to a baseband signal, so as to control the amplification of an accessed low-frequency radio frequency signal or a high-frequency radio frequency signal by the low-frequency power amplifier (102) or the high-frequency power amplifier (106); and a transceiving switch (108) selects a corresponding operation mode to conduct transmission or receiving according to an operation mode selection signal. A power amplification path is reused according to different modes, so that the power amplification path can be shared by different operation modes of a high and low frequency band with the adjustment of the control circuit (104), thus simplifying the complexity in designing the power amplifier module, and reducing the cost of relevant design implementation.