Patents Assigned to VANGUARD ENTERNATIONAL SEMICONDUCTOR CORPORATION
  • Patent number: 10276493
    Abstract: A semiconductor structure includes a conductive feature on a substrate. A plurality of first dielectric layers are disposed on the conductive feature, and stress directions of at least two of the first dielectric layers are different from one another. A first hole penetrates through the plurality of the first dielectric layers to expose the conductive feature. A first conductive plug conformally covers the first hole and is electrically connected to the conductive feature. A first insulating plug on the first conductive plug fills the first hole.
    Type: Grant
    Filed: August 1, 2017
    Date of Patent: April 30, 2019
    Assignee: VANGUARD ENTERNATIONAL SEMICONDUCTOR CORPORATION
    Inventors: Wei-Lun Hsia, Chun-Hsien Lin, Hsiao-Ying Yang