Patents Assigned to VANGUARD INIERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
  • Patent number: 11267696
    Abstract: In a non-limiting embodiment, a MEMS device may include a substrate having a device stopper. The device stopper may be integral to the substrate and formed of the substrate material. A thermal dielectric isolation layer may be arranged over the device stopper and the substrate. A device cavity may extend through the substrate and the thermal dielectric isolation layer. The thermal dielectric isolation layer and the device stopper at least partially surround the device cavity. An active device layer may be arranged over the thermal dielectric isolation layer and the device cavity.
    Type: Grant
    Filed: November 6, 2019
    Date of Patent: March 8, 2022
    Assignee: VANGUARD INIERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
    Inventors: Ranganathan Nagarajan, Jia Jie Xia, Rakesh Kumar, Bevita Kallupalathinkal Chandran
  • Patent number: 11185886
    Abstract: A MEMS device may include a first electrode region; a first piezoelectric layer arranged over the first electrode region; a second electrode region arranged over the first piezoelectric layer; a second piezoelectric layer arranged over the first piezoelectric layer and the second electrode region; a third electrode region arranged over the second piezoelectric layer; a first input port coupled to the first electrode region and/or the second electrode region for providing a first electrical signal to the first piezoelectric layer to generate a first vibration in the first piezoelectric layer; a second input port coupled to the second electrode region and/or the third electrode region for providing a second electrical signal to the second piezoelectric layer to generate a second vibration in the second piezoelectric layer; and an output port configured to receive an output signal including a superposition of the first vibration and the second vibration.
    Type: Grant
    Filed: November 30, 2018
    Date of Patent: November 30, 2021
    Assignee: VANGUARD INIERNATIONAL SEMICONDUCTOR SINGAPORE PTE. LTD.
    Inventors: Humberto Campanella Pineda, Joan Josep Giner De Haro, You Pak-Chum Qian, Rakesh Kumar