Patents Assigned to Vanguard Semiconductor, Ltd.
  • Anneal for enhancing the electrical characteristic of semiconductor devices
    Patent number: 6387761
    Abstract: A method for improving the interface between a silicon nitride film and a silicon surface is described. According to the present invention a silicon nitride film is formed on a silicon surface of a substrate. While said substrate is heated the silicon nitride film is exposed to an ambient comprising hydrogen (H2). In a prefered embodiment of the present invention the ambient comprises H2 and N2.
    Type: Grant
    Filed: February 4, 2000
    Date of Patent: May 14, 2002
    Assignees: Applied Materials, Inc., Vanguard Semiconductor, Ltd.
    Inventors: Wong-Cheng Shih, Pravin K. Narwankar, Randall S. Urdahl, Turgut Sahin