Patents Assigned to Varian Semiconductor Equiment Associates, Inc
  • Techniques for ion implantation of non-planar field effect transistors
    Patent number: 9455335
    Abstract: A method of forming a fin field effect transistor (finFET) device includes forming a fin structure on a substrate, the substrate comprising a semiconductor material and forming a replacement gate cavity comprising an exposed portion of the fin structure and a sidewall portion adjacent the exposed portion, wherein the exposed portion of the fin structure defines a channel region. The method further includes performing at least one implant into the exposed portion of the fin structure.
    Type: Grant
    Filed: November 14, 2013
    Date of Patent: September 27, 2016
    Assignee: Varian Semiconductor Equiment Associates, Inc
    Inventors: Anthony Renau, Hans-Joachim L. Gossmann