Abstract: An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
Type:
Application
Filed:
January 28, 2010
Publication date:
August 5, 2010
Applicant:
VARIAN SEMICONDUCTOR EQUIPMENT ASSOICTES, INC.
Inventors:
Russell J. Low, William Weaver, Nicholas P.T. Bateman, Atul Gupta