Abstract: Techniques for detecting ion beam contamination in an ion implantation system and interlocking same are disclosed. An ion beam is generated. One or more ion detectors located at trajectories off of that of the ion beam. Ion current levels detected by the one or more off-trajectory detectors are used to calculate a level of ion beam charge contamination. If contamination exceeds a predetermined level, process interlock may occur to prevent dosimetry errors.

Abstract: A plasma processing system includes a process chamber, a source configured to generate a plasma in the process chamber, a platen configured to support a workpiece in the process chamber, and a pressure sensor positioned adjacent to the workpiece. The pressure sensor is configured to monitor a local pressure adjacent to the workpiece. A method includes generating a plasma in a process chamber, supporting a workpiece in the process chamber, and monitoring a local pressure adjacent to the workpiece with a pressure sensor positioned adjacent to the workpiece.