Abstract: A processing apparatus includes a process chamber defining an enclosed volume, and a dual sided workpiece assembly disposed in the enclosed volume. The dual sided workpiece assembly includes a base portion and a flip portion coupled to the base portion. The flip portion has a support surface configured to support at least one dual sided workpiece and is configured to rotate about a flipping axis. The processing apparatus also includes a controller configured to control the dual sided workpiece assembly to expose a first side of the at least one dual sided workpiece to accelerating ions in the process chamber during a first time interval and to expose a second side of the at least one dual sided workpiece to accelerating ions during a second time interval different than the first time interval by rotating the flip portion about the flipping axis.

Abstract: A control apparatus for plasma immersion ion implantation of a dielectric substrate which includes an electrode disposed above a generated plasma in a plasma chamber. The electrode is biased with negative voltage pulses at a potential that is higher than a potential of a substrate or cathode configured to receive ion implantation. The electrode is more negative to give the electrons generated as secondary electrons from the electrode sufficient energy to overcome the negative voltage of the high voltage sheath around the substrate thereby reaching the substrate. These electrons are accelerated toward the substrate to neutralize charge build-up on the substrate.

Abstract: A sheet measurement apparatus has a sheet disposed in a melt. The measurement system uses a beam to determine a dimension of the sheet. This dimension may be, for example, height or width. The beam may be, for example, collimated light, a laser, x-rays, or gamma rays. The production of the sheet may be altered based on the measurements.