Patents Assigned to Varian Semuconductor Equipment Associates, Inc.
  • Damage free enhancement of dopant diffusion into a substrate
    Patent number: 9589802
    Abstract: A method of doping a substrate. The method may include implanting a dose of a helium species into the substrate through a surface of the substrate at an implant temperature of 300° C. or greater. The method may further include depositing a doping layer containing a dopant on the surface of the substrate, and annealing the substrate at an anneal temperature, the anneal temperature being greater than the implant temperature.
    Type: Grant
    Filed: December 22, 2015
    Date of Patent: March 7, 2017
    Assignee: Varian Semuconductor Equipment Associates, Inc.
    Inventors: Christopher R. Hatem, Christopher A. Rowland