Abstract: Disclosed are systems and methods for achieving sub-diffraction limit resolutions for fabrication of integrated circuits. In one embodiment, a photolithography system is disclosed. The system includes a light source, configured to emit laser beams; a reflector configured to receive the laser beams and focus the laser beams on a condensing lens; a scattering medium, configured to receive the laser beams and generate scattered laser beams; and a wave-front shaping module, configured to receive the scattered laser beams and generate a focused laser beam on a silicon wafer.

Abstract: Disclosed are systems and methods for achieving sub-diffraction limit resolutions in lithography. In one embodiment, a lithography system is disclosed. The system includes, a first light source, configured to generate excitation laser beams; a second light source, configured to generate depletion laser beams; one or more scattering mediums configured to receive one or more of the excitation laser beams and depletion laser beams and scramble the laser beams; one or more wave-front shaping modules, configured to receive the scrambled laser beams, descramble the laser beams and generate one or more focused laser beams; a numerical aperture device configured to receive the one or more focused laser beams and generate a focused point on a substrate.

Abstract: Thermal management in three dimensional integrated circuits can be difficult. Although three dimensional integrated circuits offer multiple benefits in alleviating back-end-of-the-line (BEOL) interconnect issues by reducing the wire length and reaping resistance-capacitance (RC) quadratic benefits, the thermal issues associated with stacking high performance (and subsequently high-power consumption) dice have so far proven to be prohibitive. Disclosed are methods and devices for efficient thermal management in multilayered ICs by determining thermally dangerous regions and selectively activating them to avoid undesirable temperature effects.

Abstract: Disclosed are systems and methods for improving the performance of magnetoresistive random access memory (MRAM). MRAM is one of the promising potential replacements for existing DRAM and SRAM memory devices due to the many advantages of the technology which include non-volatility, fast read and write speeds, improved read and write endurance, and low operating voltage. In one embodiment, the processing rates or other activity of circuits nearby an MRAM cell subject to write operations can be increased to increase the temperature of the MRAM cell. The increased temperature lowers the write field required during a write operation, which in turn lowers the power requirement and the switching time of the MRAM cell.