Abstract: A dual collimation deposition apparatus and method are disclosed in which the dual collimation apparatus includes at least a long-throw collimator in combination with one or more physical collimators. A new physical collimator and shield design are also disclosed for improved process uniformity and increased equipment productivity.

Abstract: A system and related method are disclosed for performing an inductively-coupled-plasma ionized physical-vapor deposition (“PVD”) process for depositing material layers onto a substrate. Within a PVD process chamber are contained a target/cathode assembly, a chuck assembly, a process medium, a variable height inductively-coupled (“VHIC”) ionization coil segment and an antenna actuator for controlling the relative vertical position of the variable height inductively-coupled ionization coil segment. The VHIC coil segment can be contained within a dielectric liner and can be covered by a multi-slotted grounded electrostatic shield. The VHIC ionization coil segment can comprise one or more zones comprised of one or more coil loops powered by one or more radio-frequency power supplies. Each zone can be powered through an adjustable passive electrical component for providing multiple inductive zone operations during a deposition process.