Abstract: A dislocation-free sheet may be formed from a melt. A sheet of material with a first width is formed on a melt of the material using a cooling plate. This sheet has dislocations. The sheet is transported with respect to the cooling plate and the dislocations migrate to an edge of the sheet. The first width of the sheet is increased to a second width by the cooling plate. The sheet does not have dislocations at the second width. The cooling plate may have a shape with two different widths in one instance. The cooling plate may have segments that operate at different temperatures to increase the width of the sheet in another instance. The sheet may be pulled or flowed with respect to the cooling plate.
Type:
Application
Filed:
September 8, 2010
Publication date:
January 6, 2011
Applicant:
VERIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
Inventors:
Peter L. KELLERMAN, Frank Sinclair, Frederick Carlson
Abstract: Plasma ion implantation apparatus includes a process chamber, a platen located in the process chamber for supporting a substrate, a dopant source including a solid dopant element and a vaporizer to vaporize dopant material from the solid dopant element, a plasma source to produce a plasma containing ions of the dopant material, and an implant pulse source to apply implant pulses to the platen for accelerating the ions of the dopant material from the plasma into the substrate.
Type:
Grant
Filed:
March 9, 2005
Date of Patent:
February 5, 2008
Assignee:
Verian Semiconductor Equipment Associates, Inc.
Inventors:
Sandeep Mehta, Steven R. Walther, Naushad K. Variam