Abstract: Provided is a method of inspecting a growth quality of a graphene layer of a graphene-grown copper foil obtained by growing the graphene layer on a copper foil layer by chemical vapor deposition (CVD), the method including reacting oxygen or water molecules with the copper foil layer via a defect portion of the graphene layer, partitioning an entire region of the graphene-grown copper foil into partial regions, sequentially obtaining images of the partial regions, detecting, with respect to each of the images of the partial regions, an oxidized region where the copper foil layer is oxidized, and setting the oxidized region as a graphene defect region, and obtaining a ratio of an area of the graphene defect region to an entire area of each of the images of the partial regions.

Abstract: A graphene synthesis chamber includes: a chamber case in which a substrate including a metal thin film is placed; a gas supply unit which supplies at least one gas comprising a carbon gas into an inner space of the chamber case; a main heating unit which emits at least one light to the inner space to heat the substrate; and at least one auxiliary heating unit which absorbs the at least one light and emits radiant heat toward the substrate.