Patents Assigned to Versum Marerials US, LLC
  • Etching Solution For Selectively Removing Silicon Nitride During Manufacture Of A Semiconductor Device
    Publication number: 20180346811
    Abstract: Described herein is an etching solution comprising water, phosphoric acid solution (aqueous), and a hydroxyl group-containing solvent. Such compositions are useful for the selective removal of silicon nitride over silicon oxide from a microelectronic device having such material(s) thereon during its manufacture.
    Type: Application
    Filed: May 25, 2018
    Publication date: December 6, 2018
    Applicant: Versum Marerials US, LLC
    Inventors: Yi-Chia Lee, Wen Dar Liu