Abstract: A composition and method for using the composition in the fabrication of an electronic device are disclosed. Compounds, compositions and methods for depositing a low dielectric constant (<4.0) and high oxygen ash resistance silicon-containing film such as, without limitation, a carbon doped silicon oxide, are disclosed.

Abstract: A method for making a dense organosilicon film with improved mechanical properties, the method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a novel mono- or dialkoxysilane; and applying energy to the gaseous composition comprising the novel mono- or dialkoxysilane in the reaction chamber to induce reaction of the gaseous composition comprising the novel mono- or dialkoxysilane to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant of from about 2.8 to about 3.3, an elastic modulus of from about 7 to about 30 GPa, and an at. % carbon of from about 10 to about 30 as measured by XPS.

Abstract: The disclosed and claimed subject matter pertains to an etching solution including (i) water, (ii) at least one oxidizer, (iii) at least one fluoride ion source, (iv) at least one polyfunctional acid; (v) at least one corrosion inhibiting surfactant, (vi) at least one silane silicon oxide etch inhibitor and (vii) optionally at least one water-miscible organic solvent. The solutions are useful for the selective removal of silicon-germanium over poly silicon from a microelectronic device having such material(s) thereon during its manufacture.

Abstract: Lanthanide compounds for vapor deposition having ?50.0 ppm, ?30.0 ppm, or ?10.0 ppm of all halide impurity combined is provided. The purification systems and methods are also provided.

Abstract: Electrode attachment assemblies for electrolytic cells and electrolytic cells having one or more electrode attachment assemblies and the method of using the same are provided that comprise a carbon-containing electrode and one or more deformable attachment elements in direct or indirect contact with said carbon-containing electrode, wherein said one or more deformable attachment elements will deform at a stress lower than the stress that results in fracture of the carbon-containing electrode to accommodate the expansion of the carbon-containing electrode when in use.

Abstract: A method for developing or improving a process for producing a product from a material comprising steps of acquiring process data from at least two different sources for the production process and its relevant parameters by using a Data Collecting computer; using the acquired process data related to the production process to perform a Process Mapping step by using a Process Mapping computer; assigning the acquired process data related to the relevant parameters of the production process to its corresponding process parts by performing a Data Mapping step by using a Data Mapping computer; analyzing the therefore mapped process data with a specific software performed on an Analyzing computer thereby identifying and validating one or more existing characteristics related to the quality or performance of the production process; and using the identified and validated characteristics to develop the production process or improve its performance.

Abstract: The disclosed and claimed subject matter relates to selective thermal atomic layer etching with a novel series of halogen-free organic acids cycled with an oxidant as a co-reactant to etch metals.

Abstract: Precursors and methods for (a) forming silicon-containing films and (b) functionalizing substrate surfaces in order to generate a germanium seed layer suitable for deposition of Ge films. In one aspect, there is provided a precursor of Formula I and/or a precursor of Formula II: as described herein.

Abstract: A system for semiconductor fabrication having at least one heated valve manifold assembly comprising a heat-conductive plate having a total surface area, said conductive plate having a first side and a second side; at least one heater contacting said at least one heat-conductive plate; a valve manifold comprising a plurality of valves and pipes; said plurality of said valves and pipes having a total surface area wherein a portion of the surface area of said plurality of valves and pipes contacts said at least one heat-conductive plate; and one or more layers of insulation covering: (i) a majority of the surface area of said plurality of said valves and pipes where said portion contacts said at least one heat-conductive plate, (ii) said at least one heater in contact with said at least one heat-conductive plate, and (iii) the majority of the surface area of said at least one heat-conductive plate.

Abstract: The present invention provides a cleaning composition comprises water; one or more organic acid; at least two surfactants wherein the first type surfactant is a diphenyl disulfonic surfactant, the second type surfactant has a surface tension of less than 50 dynes/cm at 0.01 wt % concentration in water, and the second type surfactant is not the first type surfactant; and optionally fluoride compounds, polymers, corrosion inhibitors, biological preservatives, pH adjusting agents.

Abstract: A method for improving the elastic modulus of dense organosilica dielectric films (k?2.7) without negatively impacting the film's electrical properties and with minimal to no reduction in the carbon content of the film. The method comprising the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber a gaseous composition comprising a mixture of an alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes; and applying energy to the gaseous composition comprising the mixture of the alkyl-alkoxysilacyclic compound and 5% or less of certain bis(alkoxy)silanes or mono-alkoxysilanes to deposit an organosilicon film on the substrate, wherein the organosilicon film has a dielectric constant from ˜2.70 to ˜3.30, an elastic modulus of from ˜6 to ˜30 GPa, and an at. % carbon from ˜10 to ˜45 as measured by XPS.

Abstract: Amino-functionalized linear and cyclic oligosiloxanes, which have at least two silicon and two oxygen atoms as well as an organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized linear and cyclic oligosiloxanes are also disclosed.

Abstract: A method and composition for producing a porous low k dielectric film via chemical vapor deposition includes the steps of: providing a substrate within a reaction chamber; introducing into the reaction chamber gaseous reagents including at least one structure-forming precursor comprising an silacyclic compound, and with or without a porogen; applying energy to the gaseous reagents in the reaction chamber to induce reaction of the gaseous reagents to deposit a preliminary film on the substrate, wherein the preliminary film contains the porogen, and the preliminary film is deposited; and removing from the preliminary film at least a portion of the porogen contained therein and provide the film with pores and a dielectric constant of 3.0 or less. In certain embodiments, the structure-forming precursor further comprises a hardening additive.

Abstract: A selective plasma enhanced atomic layer deposition (ALD) process is disclosed. The process may comprise loading a substrate comprising a dielectric material, and a metal, into a reactor. The substrate may be reacted with a non-plasma based oxidant, thereby forming an oxidized metal surface on the metal. The substrate may be heated and exposed to a passivation agent that adsorbs more onto the oxidized metal than the dielectric material. Such exposure may form a passivation layer on the oxidized metal surface, and the substrate may be exposed to a silicon precursor that adsorbs more onto the dielectric material that the passivation layer, forming a chemi-adsorbed silicon-containing layer on the dielectric material. The substrate may be exposed to a plasma based oxidant, that simultaneously partially oxidizes the passivation layer, and oxidizes the chemi-adsorbed silicon-containing layer to form a dielectric film on the dielectric material.

Abstract: Amino-functionalized cyclic oligosiloxanes, which have at least three silicon and three oxygen atoms as well as at least one organoamino group and methods for making the oligosiloxanes are disclosed. Methods for depositing silicon and oxygen containing films using the organoamino-functionalized cyclic oligosiloxanes are also disclosed.

Abstract: Cobalt barrier Chemical Mechanical Planarization (CMP) compositions, systems and methods are provided for the removal of cobalt or a cobalt alloy from the surface of a semiconductor device during its manufacture. The compositions use suitable chemical additives selected from the group consisting of an aliphatic organic carboxylic acid, an aromatic organic carboxylic acid, and combinations thereof; abrasives; an oxidizing agent; and an corrosion inhibitor; to provide tunable cobalt film removal rates, tunable selectivity between cobalt and dielectric or other barrier films, and maintain very low static etching rates on cobalt film.

Abstract: Methods of using high-purity alkynes substantially free of residual alkyl halides, water and/or carboxylic acids and their use (e.g., in formulations) for enhanced passivation of metallic substrates.

Abstract: A method for depositing a silicon-containing film, the method comprising: placing a substrate comprising at least one surface feature into a flowable CVD reactor which is at a temperature of from about ?20° C. to about 100° C.; increasing pressure in the reactor to at least 10 torr; and introducing into the reactor at least one silicon-containing compound having at least one acetoxy group to at least partially react the at least one silicon-containing compound to form a flowable liquid oligomer wherein the flowable liquid oligomer forms a silicon oxide coating on the substrate and at least partially fills at least a portion of the at least one surface feature. Once cured, the silicon oxide coating has a low k and excellent mechanical properties.

Abstract: An atomic layer deposition (ALD) process for formation of silicon oxide at a temperature greater than 500° C. is performed using at least one organoaminodisilazane precursor having the following Formula I: wherein R1 and R2 are each independently selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group with a proviso that R1 and R2 cannot be both hydrogen; R3 is selected from hydrogen, a linear or branched C1 to C10 alkyl group, and a C6 to C10 aryl group; and either R1 and R2 are linked to form a cyclic ring structure or R1 and R2 are not linked to form a cyclic ring structure.

Abstract: Described herein are compositions and methods using same for forming a silicon-containing film such as without limitation a silicon oxide, silicon nitride, silicon oxynitride, a carbon-doped silicon nitride, or a carbon-doped silicon oxide film on at least a surface of a substrate having a surface feature. In one aspect, the silicon-containing films are deposited using a compound having Formula I or II described herein.