Abstract: In accordance with one embodiment there is provided a method of improving the performance of a substrate cleaner of the type having a megasonic probe with a probe shaft extending generally parallel to a surface of a rotating substrate, and at least one dispenser for applying a cleaning liquid onto the surface of the substrate, wherein the megasonic probe agitates the liquid on the surface. The method comprising dissolving gas in the liquid before the liquid reaches the dispenser. In accordance with another embodiment, an apparatus for cleaning substrates comprises a rotary fixture which is adapted to support a substrate and rotate the substrate about a first axis, a probe having a probe shaft extending generally parallel to a surface of the substrate, and a megasonic transducer in acoustically coupled relation to the probe.

Abstract: Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe.

Abstract: Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe.

Abstract: The present invention provides a megasonic cleaning apparatus configured to provide effective cleaning of a substrate without causing damage to the substrate. The apparatus includes a probe having one of a variety of cross-sections configured to decrease the ratio of normal-incident waves to shallow-angle waves. One such cross-section includes a channel running along a portion of the lower edge of the probe. Another cross-section includes a narrow lower edge of the probe. Another cross-section is elliptical. Another cross-section includes transverse bores originating in the lower edge of the probe. As an alternative to, or in addition to, providing a probe having a cross-section other than circular, the present invention may also provide a probe having a roughened lower surface.

Abstract: Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution has one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution has highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy.

Abstract: Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe.

Abstract: Semiconductor wafers are cleaned using megasonic energy to agitate cleaning fluid applied to the wafer. A source of energy vibrates an elongated probe which transmits the acoustic energy into the fluid. The probe has a solid cleaning rod and a flared or stepped rear base. In one form, the probe is made of one piece, and in another, the rod fits into a socket in the base. This enables a rod to be made of material which is compatible with the cleaning solution, while the base may be of a different material. A heat transfer member acoustically coupled to the probe base and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and the transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In another arrangement, an end of the housing is coupled between the transducer and the probe.

Abstract: A rotating wafer processor uses a non-contacting gas seal mounted to a process chamber and a vibration isolation mount between the chamber and a support structure. The non-contacting seal incorporates a housing with a chamfer on opposing ends of an annular land encircling a rotating drive shaft, and one or more outlet ports on the chamfers to form a gas-purged, noncontacting seal. The seal is directly mounted to the chamber and interposed between the chamber and bearings that support the drive shaft, so the shaft, chamber and rotating load vibrate together.

Abstract: A dryer for processing semiconductor substrates which rotates a carrier containing the substrates within a housing in combination with a bubbler which heats and directs a gas containing a water tension reducing vapor to the housing to contact the substrates and thereby hasten drying, decrease water marking, and decrease contamination.

Abstract: A wafer cleaning system cleans semiconductor wafers using megasonic energy to agitate cleaning fluid applied to the wafer. A source of acoustic energy vibrates an elongated quartz probe which transmits the acoustic energy into the fluid. One form of the probe has a solid cylindrical-shaped cleaning portion within the tank and a flared rear portion with an increasing diameter outside the tank. A heat transfer member acoustically coupled to the larger rear portion of the probe and to a transducer conducts heat away from the transducer. A housing for the heat transfer member and transducer supports those components and provides means for conducting coolant through the housing to control the temperature of the transducer. In one arrangement, fluid is sprayed onto both sides of a wafer while a probe is positioned close to an upper side. In another arrangement, a short probe is positioned with its end face close to the surface of a wafer, and the probe is moved over the wafer as it rotates.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected into the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The solutions are initiated either by injecting the chemicals into an incoming DI water line or directly into the tank. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution comprises one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solution comprises highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

Abstract: Semiconductor wafers are positioned in a cleaning tank and subjected to sequential flows of one or more highly diluted cleaning solutions that are injected from the lower end of the tank and allowed to overflow at the upper end. One solution contains one part ammonium hydroxide, two parts hydrogen peroxide, and 300-600 parts deionized water together with a trace of high purity surfactant. Rinsing water is flowed through the tank after the first solution is dumped. A second solutions contains highly dilute hydrofluoric acid. A third solution is more dilute than the first solution. A fourth solution contains hydrochloric acid greatly diluted with deionized water. The cleaning tank is provided with a megasonic generator in its lower portion for selective application of megasonic energy. Quick dump valves in the tank bottom enable the solutions to be quickly dumped followed by one or more rinse steps, including a quick refill while spraying and then dumping of the rinsing water.

Abstract: A method for drying semiconductor wafers produces ultra-clean wafers without conventional drying chemicals. The method involves slowing draining a rinsing fluid from a processing tank while heating the wafer at the fluid interface as the wafer emerges from the rinsing fluid. The portion of the wafer surface at the fluid interface is heated to a temperature greater than the rinsing fluid to drive contaminant particles away from the wafer surface. An apparatus for performing this drying method also is provided.

Abstract: An apparatus and method for rapidly drying an object, such as a semiconductor wafer, by creating a vapor flow from a liquid, such as isopropyl alcohol, and exposing the object to that flow. The apparatus comprises a heater for vaporizing liquid in a reservoir into a vapor, a condenser for subsequently condensing the vapor, and a treatment chamber into which the object to be dried is placed. The vaporization of the liquid at the reservoir and its subsequent condensation at the condenser creates a pressure gradient between the heater and the condenser, thereby forming a vapor stream. The object to be dried is exposed to this vapor stream, whereby some of the vapor condenses on the object and combines with the liquid on the object to produce a condensate which flows off the object, thereby drying the object. The method comprises the steps of heating a liquid to form a vapor, condensing the vapor to form a vapor stream, and positioning an object to be dried in the vapor stream.

Abstract: A thin-walled rigid tube made of aluminum or other strong material that is a good thermal conductor and a good transmitter of megasonic energy is provided with an external sheath of Teflon to shield the tube from fluids used in cleaning semiconductor wafers. Arcuate transducers are coupled to the interior of the tube and energized with megasonic energy to transmit energy through the tube into fluid surrounding the wafers. A partition in the tube divides the tube into two or more chambers. Nitrogen is conducted through a tube end cap and through the chamber containing the transducers. Cooling water is ducted through the other chamber to conduct heat away from the assembly.

Abstract: A semiconductor wafer processing system utilizing a specially constructed wet processing chamber for a single wafer and a megasonic, or high frequency, energy dispensing system. The construction of the container causes megasonic energy to become intensified near the surface of the wafer, thereby providing more cleaning power, and resulting cleaning. The megasonic device may be mounted on a bottom wall dump valve. Also, the energy output may be used to rotate a wafer.

Abstract: A semiconductor wafer processing system utilizing a specially constructed wet processing chamber for a single wafer and a megasonic, or high frequency, energy dispensing system. The construction of the container causes megasonic energy to become intensified near the surface of the wafer, thereby providing more cleaning power, and resulting cleaning. The megasonic device may be mounted on a bottom wall dump valve. Also, the energy output may be used to rotate a wafer.